PHE13005 NXP Semiconductors, PHE13005 Datasheet - Page 4

• Manufacturer Part Number: PHE13005
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1999
Silicon Diffused Power Transistor
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C
120
110
100
100
Fig.9. Collector-Emitter saturation voltage.
90
80
70
60
50
40
30
20
10
10
Fig.8. Typical DC current gain. h
2.0
1.6
1.2
0.8
0.4
0.0
0
1
0.01
0.01
Fig.7. Normalised power dissipation.
0
PD%
h
VCEsat/V
FE
PD% = 100 PD/PD
20
IC=1A
40
0.10
parameter V
Tj = 25 C
0.1
2A
60
IB/A
3A 4A
Tmb / C
IC / A
80
Normalised Power Derating
1.00
25˚C
CE
100
= f (T
1
1V
120
mb
FE
5V
)
10.00
= f(I
140
C
10
)
4
Solid lines = typ values, V
Solid lines = typ values, V
Fig.11. Collector-Emitter saturation voltage.
0.01
0.1
10
Fig.10. Base-Emitter saturation voltage.
1E-06
1
0.5
0.4
0.3
0.2
0.1
0.0
Fig.12. Transient thermal impedance.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
VCEsat/V
Zth / (K/W)
D=
0.1
VBEsat/V
0.05
0.02
Z
0.5
0.2
0.1
th j-mb
0
= f(t); parameter D = t
1E-04
IC/A
IC/A
1
1
t / s
BEsat
CEsat
P
D
1E-02
= f(IC); at IC/IB =4.
= f(IC); at IC/IB =4.
Product specification
t p
T
PHE13005
p
D =
/T
1E+00
T
t
p
t
10
10
Rev 1.000