BDP32 NXP Semiconductors, BDP32 Datasheet - Page 2

• Manufacturer Part Number: BDP32
• Description: Pnp Medium Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BDP31.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 23
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
High current (max. 3 A)
Low voltage (max. 45 V).
General purpose medium power applications.
CBO
CEO
EBO
tot
PNP medium power transistor
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook” .
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
amb
2
PINNING
25 C; note 1
CONDITIONS
handbook, halfpage
PIN
2,4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
Top view
base
collector
emitter
1
2
4
65
65
MIN.
DESCRIPTION
3
MAM288
Product specification
1.35
+150
150
+150
45
45
5
3
6
0.5
MAX.
1
BDP32
2, 4
3
V
V
V
A
A
A
W
C
C
C
2
.
UNIT