BDP32 NXP Semiconductors, BDP32 Datasheet - Page 3

• Manufacturer Part Number: BDP32
• Description: Pnp Medium Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
R
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
th j-a
th j-s
PNP medium power transistor
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook” .
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
p
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
I
I
I
I
I
I
V
E
E
C
C
C
C
C
C
C
CE
= 0; V
= 0; V
= 0; V
= 0.5 A; V
= 2 A; V
= 500 mA; I
= 2 A; I
= 500 mA; I
= 2 A; I
= 5 V; I
CB
CB
EB
3
B
B
= 40 V
= 40 V; T
= 5 V
CE
= 200 mA; note 1
= 200 mA; note 1
C
CE
= 1 V; note 1; see Fig.2
= 250 mA; f = 100 MHz
CONDITIONS
B
B
= 12 V; note 1; see Fig.2
= 50 mA; note 1
= 50 mA; note 1
note 1
CONDITIONS
j
= 150 C
VALUE
91
10
40
20
60
MIN.
Product specification
MAX.
50
10
50
300
700
1.2
1.5
BDP32
UNIT
K/W
K/W
2
.
nA
nA
mV
mV
V
V
MHz
UNIT
A