BUH313D Inchange Semiconductor Company, BUH313D Datasheet

BUH313D

Manufacturer Part Number

BUH313D

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.BUH313D.pdf (2 pages)

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BOSTOCK HK LIMITED

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BUH313D

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INCHANGE Semiconductor

isc

DESCRIPTION

·High Switching Speed

·High Voltage

·Built-in Integrated Diode

APPLICATIONS

·Horizontal deflection stage in standard and high resolution

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

Displays for TV’s and monitors.

th j-c

CBO

CEO

EBO

stg

Silicon NPN Power Transistor

Thermal Resistance, Junction to Case

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Base Current-Peak

Collector Power Dissipation

Junction Temperature

Storage Temperature

=25℃

PARAMETER

=25

℃)

-65~150

VALUE

1300

600

150

MAX

2.5

UNIT

℃/W

℃

isc

Product Specification

BUH313D

Related parts for BUH313D

BUH313D Summary of contents

Page 1

... C Junction Temperature T J Storage Temperature T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance, Junction to Case R th j-c isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 1300 V 600 ℃ 150 ℃ -65~150 MAX UNIT ℃/W 2.5 isc Product Specification BUH313D ...

Page 2

... 3A 0.75A 5V 1300V 1300V;V = 0;T =125℃ 5V;T =100℃ 3A 400V CC BUH313D MIN TYP MAX UNIT 600 V 1.5 V 1.3 V 300 mA 1 2.5 V μs 1.8 2.7 μs 0.2 0.3 ...

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