BUH313D Inchange Semiconductor Company, BUH313D Datasheet - Page 2

• Manufacturer Part Number: BUH313D
• Description: Isc Silicon Npn Power Transistor
• Manufacturer: Inchange Semiconductor Company

INCHANGE Semiconductor
isc
ELECTRICAL CHARACTERISTICS
T
isc Website：www.iscsemi.cn
Switching Times; Resistive Load
C
SYMBOL
V
=25℃ unless otherwise specified
V
V
CEO(SUS)
V
CE
BE
I
I
h
EBO
CES
ECF
t
t
FE
s
Silicon NPN Power Transistor
(sat)
(sat)
f
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Diode Forward Voltage
Storage Time
Fall Time
PARAMETER
I
I
I
V
V
V
I
I
I
I
V
C
C
C
C
C
F
C
EB
CE
CE
CC
= 3A
= 100mA ;I
= 3A; I
= 3A; I
= 3A ; V
= 3A ; V
= 3A;I
= 5V; I
= 1300V;V
= 1300V;V
= 400V
B1
B
B
CONDITIONS
= 0.75A
B
= 0.75A
B
= 1A; I
CE
CE
C
=0
= 5V
= 5V;T
B
= 0,L= 25mH
BE
BE
B2
= 0
= 0;T
= 1.5A
C
=100℃
C
=125℃
isc
Product Specification
MIN
600
5
3
TYP
1.8
0.2
BUH313D
MAX
300
1.5
1.3
1.0
2.0
2.5
2.7
0.3
UNIT
mA
mA
μs
μs
V
V
V
V