IXZR08N120B IXYS Corporation, IXZR08N120B Datasheet
IXZR08N120B
Manufacturer Part Number
IXZR08N120B
Description
Ixzr08n120
Manufacturer
IXYS Corporation
Datasheet
1.IXZR08N120B.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXZR08N120B
Manufacturer:
IXYS
Quantity:
101
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS
Optimized for RF Operation
Ideal for Class C, D, & E Applications
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 4.4W/°C above 25°C
= 25°C
=0
DM
= V
= 0.8V
= 50 V, I
= 0 V, I
= ±20 V
= 20 V, I
, di/dt ≤ 100A/µs, V
GS
, I
DSS
D
D
DC
D
D
G
= 4 ma
= 250µΑ
, V
= 0.5I
= 0.5I
= 0.2Ω
DS
= 0
D25
D25
GS
, pulse test
TM
= 1 MΩ
T
T
DD
J
J
MOSFET Process
= 25C
=125C
≤ V
DSS
JM
,
1200
min.
-55
-55
3.5
10.1
typ.
175
300
2.1
3.5
Maximum Rat-
1200
1200
>200 V/ns
TBD
TBD
TBD
TBD C/W
TBD C/W
±20
±30
3.0
+ 175
40
IXZR08N120 & IXZR08N120A/B
max.
+175
±100
8
8
5 V/ns
6.5
50
1
ings
Z-MOS RF Power MOSFET
mJ
W
W
W
V
V
V
V
A
A
A
mA
nA
µA
°C
°C
°C
°C
Ω
S
V
V
g
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
•
•
Isolated Substrate
IXYS advanced Z-MOS process
Low gate charge and capacitances
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
High Performance RF Z-MOS
Optimized for RF and high speed
Common Source RF Package
Easy to mount—no insulators needed
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
Low R
V
I
R
P
D25
DSS
DC
DS(on)
A = Gate Source Drain
B = Drain Source Gate
DS(on)
=
=
=
=
TBD W
1200 V
2.1 Ω
8.0 A
TM
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IXZR08N120B Summary of contents
Page 1
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions T = 25°C to 150° DSS T = 25°C to ...
Page 2
Symbol Test Conditions iss 0 oss MHz C rss Back Metal to any Pin C stray T d(on ...
Page 3
IXZ308N120 Capacitances verses Vds IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Ciss Coss Crss 600 800 Vds in Volts 1000 1200 Doc #dsIXZR08N120_A/B REV 07/04 © 2004 IXYS RF An IXYS Company ...