IXZR08N120B IXYS Corporation, IXZR08N120B Datasheet - Page 2

• Manufacturer Part Number: IXZR08N120B
• Description: Ixzr08n120
• Manufacturer: IXYS Corporation

IXYS RF reserves the right to chang limits, test conditions and dimensions.
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,835,592
5,034,796
5,034,796
5,381,025
5,381,025
6,731,002
6,731,002
Symbol
R
C
C
C
C
T
T
T
T
Source-Drain Diode
Symbol
I
I
V
T
S
SM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
4,850,072
4,860,072
5,049,961
5,049,961
5,640,045
5,640,045
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
Test Conditions
V
Repetitive; pulse width limited by
T
I
300µs, duty cycle ≤2%
D
F=
JM
GS
GS
GS
G
= 0.5 I
I
s,
= 1 Ω (External)
= 0 V, V
= 15 V, V
= 0 V
V
GS
=0 V, Pulse test, t ≤
DM
DS
DS
= 0.8 V
= 0.8 V
4,881,106
4,881,106
5,063,307
5,063,307
6,404,065
6,404,065
DSS(max)
DSS
,
Characteristic Values
(
Characteristic Values
(
T
T
J
J
4,891,686
4,891,686
5,187,117
5,187,117
6,583,505
6,583,505
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
1960
TBD
typ.
typ.
9.2
59
33
4,931,844
4,931,844
5,237,481
5,237,481
6,710,463
6,710,463
4
5
4
6
IXZR08N120 & IXZR08N120A/B
max.
max.
1.5
48
Z-MOS RF Power MOSFET
1
8
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Α
A
V
5,017,508
5,017,508
5,486,715
5,486,715
6,727,585
6,727,585
1 2 3
120 : 1=G, 2=D,3=S
120A: 1=G, 2=S, 3= D
120B: 1=D, 2=S, 3=G