BFR35APE6327 Infineon Technologies Corporation, BFR35APE6327 Datasheet - Page 2

• Manufacturer Part Number: BFR35APE6327
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics
Parameter
Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector -base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 15 mA, V
= 2.5 V, I
= 20 V, V
= 10 V, I
B
E
= 0
C
CE
BE
= 0
= 0
= 8 V
= 0
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
15
40
-
-
-
Values
typ.
100
-
-
-
-
max.
Aug-01-2001
100
100
200
10
BFR35AP
-
Unit
V
µA
nA
µA
-