BFR35APE6327 Infineon Technologies Corporation, BFR35APE6327 Datasheet - Page 3

• Manufacturer Part Number: BFR35APE6327
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
Z
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
1
C
C
C
C
G
L
CB
CE
EB
= 15 mA, V
= 2 mA, V
= 15 mA, V
= 15 mA, V
ma
= Z
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
= |S
Lopt
, f = 900 MHz
21
/S
CE
CE
CE
CE
12
= 6 V, Z
| (k-(k
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
2
-1)
S
S
S
= Z
1/2
= Z
= Z
)
Sopt
L
Sopt
1)
= 50
,
,

,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
3.5
-
-
-
-
-
-
-
-
-
Values
12.5
0.38
typ.
0.2
0.7
1.8
2.9
9.5
15
5
7
max.
Aug-01-2001
0.6
BFR35AP
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB