MT28C128532W18 Micron Technology, MT28C128532W18 Datasheet

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MT28C128532W18

Manufacturer Part Number
MT28C128532W18
Description
(MT28C128532W18 / MT28C128564W18) 128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory
Manufacturer
Micron Technology
Datasheet
www.DataSheet4U.com
FLASH AND CellularRAM
COMBO MEMORY
Features
• Stacked die Combo package
• Basic configuration
• F_V
• Asynchronous access time
• Page Mode read access (W18/W30)
• Enhanced suspend options
• Read/Write CellularRAM during program/erase of
• Each Flash contains two 64-bit chip protection
• Flash PROGRAM/ERASE cycles
• Cross-compatible command set support
• Manufacturer’s ID (ManID)
09005aef80b10a55
MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
Includes two 64Mb Flash devices
Choice of either one 32Mb or one 64Mb
Flash
CellularRAM
1.70V (MIN)/1.95V (MAX) F_V
1.70V (MIN)/2.24V (MAX) V
1.70V (MIN)/3.3V(MAX) V
1.80V (TYP) F_V
12V ±5% (HV) F_V
Flash/CellularRAM access time: 60ns @ 1.70V V
Interpage read access: 60ns @ 1.70V F_V
Intrapage read access: 20ns @ 1.70V F_V
Interpage read access: 70ns @ 1.70V F_VCC , PS_VCC (W30)
Intrapage read access: 22ns @ 1.70V F_VCC, PS_VCC (W30)
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
Flash
registers for security purposes
100,000 WRITE/ERASE cycles per block
Extended command set
Common Flash interface (CFI) compliant
Micron
Intel
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
CellularRAMÔ device
Flexible multibank architecture
4 Meg x 16 Async/Page/Burst interface
Support for true concurrent operations with
no latency
Low-power, high-density design
2 Meg x 16 or 4 Meg x 16 configurations
Async/Page
accelerated programming algorithm [APA]
activation)
CC
®
, V
(0x89h)
®
CC
(0x2Ch)
Q, F_V
PP
PP
PP
(in-system PROGRAM/ERASE)
, PS_V
(in-house programming and
CC
CC
CC
Q (W30)
voltages
CC
Q (W18)
, PS_V
CC
CC
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
, PS_V
CC
, PS_V
CC
CC
(W18)
(W18)
CC
1
128Mb MULTIBANK BURST FLASH
NOTE:
MT28C128532W18/W30D
MT28C128564W18/W30D
Low Voltage, Wireless Temperature
O
• Timing
• Burst Frequency
• Boot Block Configuration
• I/O Voltage Range
• Manufacturer’s ID (ManID)
• Operating Temperature Range
• Package
ptions
60ns
70ns
66 MHz
54 MHz
Top/Top
Top/Bottom
Bottom/Top
Bottom/Bottom
VccQ 1.70V–1.95V
VccQ 1.70V–3.3V
Micron (0x2Ch)
Intel (0x89h)
Wireless Temperature (-25°C to +85°C)
77-ball FBGA (8 x 10 grid)
MT28C128564W18DFW-705 BBWT
1. Contact factory for availability.
1
A
D
G
H
B
C
E
F
K
J
Figure 1: 77-Ball FBGA
PS_OE#
PS_V
F_CE1#
NC
A4
A5
A3
A2
A1
A0
1
SS
Part Number Example:
PS_LB#
F_OE1#
DQ8
DQ0
V
A18
A17
NC
A7
A6
SS
2
Q
PS_UB#
V
DQ2
DQ1
DQ9
A19
NC
CC
3
Q
PS_V
PS_V
F_WP#
F_RST#
F_V
DQ10
DQ11
F_V
(Ball Down)
DQ3
NC
Top View
4
PP
CC
SS
SS
PS_WE#
F_WE#
PS_V
PS_V
F_V
ADV#
DQ12
DQ5
DQ4
NC
5
CC
CC
SS
F_V
PS_CE#
F_V
DQ13
DQ14
V
DQ6
CLK
A20
A8
SS
6
CC
CC
Q
WAIT#
DQ15
V
F_V
A21
A10
A14
DQ7
NC
A9
CC
7
SS
Q
©2003 Micron Technology, Inc.
PS_ZZ#
F_CE2#
F_OE2#
PS_V
V
A11
A12
A13
A15
A16
ADVANCE
CC
8
Q
SS
M
arking
None
WT
FW
-60
-70
TT
TB
BT
BB
18
30
K
6
5

Related parts for MT28C128532W18

MT28C128532W18 Summary of contents

Page 1

... PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS. 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO ™ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature voltages CC ...

Page 2

... Flash Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Power Consumption .11 Flash Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Data Sheet Designation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Revision History .21 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 ADVANCE ©2003 Micron Technology. Inc. ...

Page 3

... Flash Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Figure 3: Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Figure 4: Part Number Chart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Figure 5: 77-Ball FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 www.DataSheet4U.com 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 ADVANCE ©2003 Micron Technology. Inc. ...

Page 4

... Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 7: Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 8: Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 9: DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Table 10: CFI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 www.DataSheet4U.com 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 ADVANCE ©2003 Micron Technology. Inc. ...

Page 5

... Each Flash die has a dedicated CE# and OE# www.DataSheet4U.com control, enabling each Flash to be independently select- able. The MT28C128532W18/W30D MT28C128564W18/W30D enable soft protection for blocks, as read only, by con- figuring soft protection registers with dedicated com- mand sequences. For security purposes, two user- programmable 64-bit chip protection registers are pro- vided for each Flash device ...

Page 6

... Figure 2: Flash Memory Map Main Main Main F_CE2#/F_OE2# controlled lower address space (64Mb to 128Mb) 6 Main Main Main Parameter Blocks – Bottom Boot F_CE1#/F_OE1# (0Mb to 64Mb) Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE ...

Page 7

... ASYNC/PAGE CellularRAM COMBO Figure 3: Block Diagram FLASH #1 Bank 0 4,096K x 16 Bank 15 FLASH #2 Bank 16 4,096K x 16 Bank 31 CellularRAM 2,048K x 16 4,096K x 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 ADVANCE CLK F_WP# F_RST# F_V CC F_V SS F_V PP DQ0–DQ15 ...

Page 8

... Cross-Reference for Abbreviated Device Marks PRODUCT PART NUMBER MT28C128532W18DFW-606 BTWT MT28C128532W18DFW-606 BBWT www.DataSheet4U.com MT28C128532W18DFW-705 BTWT MT28C128532W18DFW-705 TTWT MT28C128564W18DFW-606 BTWT MT28C128564W18DFW-705 BTWT MT28C128532W18DFW-606 TBWT MT28C128532W18DFW-606 BBWT MT28C128532W18DFW-705 BBWT MT28C128532W18DFW-705 TTWT MT28C128532W30DFW-606 BBWT MT28C128532W30DFW-705 TBWT MT28C128564W30DFW-606 BTWT MT28C128564W30DFW-705 BTWT 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO â ...

Page 9

... Valid Part Number Combinations PART NUMBER MT28C128532W18DFW-606 BTWT MT28C128532W18DFW-606 BBWT MT28C128532W18DFW-705 BTWT MT28C128532W18DFW-705 TTWT MT28C128564W18DFW-606 BTWT MT28C128564W18DFW-705 BTWT MT28C128532W18DFW-606 TBWT MT28C128532W18DFW-606 BBWT MT28C128532W18DFW-705 BBWT MT28C128532W18DFW-705 TTWT MT28C128532W30DFW-606 BBWT MT28C128532W30DFW-705 TBWT MT28C128564W30DFW-606 BTWT MT28C128564W30DFW-705 BTWT 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN 128Mb MULTIBANK BURST FLASH ...

Page 10

... Flash Core Power Supply CC Supply CellularRAM Core Ground SS Supply CellularRAM Core Power Supply CC Q Supply Flash/CellularRAM I/O Supply Q Supply Flash/CellularRAM I/O Ground – No Connect – Ball not Mounted 10 DESCRIPTIONS Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE ...

Page 11

... Top Bottom Bottom/Bottom MultiChip Packaging Considerations Multichip packaging presents unique chal- lenges when controlling complex memory devices. The MT28C128532W18/W30D MT28C128564W18/W30D Micron Flash devices with a single CellularRAM device. Unique IDs, State Machines, and Registers Each Flash device has a separate command state machine (CSM) and status register (SR) and read con- figuration register (RCR) ...

Page 12

Table 5: Truth Table FLASH SIGNALS MODES F_CE1# F_CE2# F_OE1# F_OE2# F_WE# F_RP# ADV# WAIT# PS_CE# PS_ZZ# PS_OE Read Write Standby Output Disable Reset ...

Page 13

... SYMBOL TYP MAX C TBD TBD IN C TBD TBD OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE NOTES 2 UNITS ° Cycles Cycles Hours UNITS pF pF ...

Page 14

... F_I CCR F_I CCW F_I CCE F_I CCWS F_I CCES F_I CCAPS F_I PPS F_I PPWS F_I PPES F_I PPR Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 ADVANCE W18/W30 TYP MAX UNITS NOTES 0 0 ...

Page 15

... TYP MAX UNITS 0.05 0. 0.05 0. (-60) (-70 CCWS burst read current Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE NOTES ©2003 Micron Technology. Inc. ...

Page 16

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE ...

Page 17

... Partition region 1 erase block type 1 information Partition region 1 erase block type 1 information Partition region 1 erase block type 1 information Partition region 1 erase block type 1 information 17 DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE ...

Page 18

... Partition region 2 erase block type 1 information Partition region 2 erase block type 1 information Partition region 2 erase block type 1 information Partition region 2 erase block type 1 information 18 DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE ...

Page 19

... Partition 2 (erase block type 2) Partition 2 (erase block type 2) Partition 2 (erase block type 2) bits per cell Partition 2 (erase block type 2) page mode and synchronous mode capabilities Reserved Reserved 19 DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology. Inc. ADVANCE ...

Page 20

... E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. CellularRAM is a trademark of Micron Technology, Inc., inside the U.S. and a trademark of Infineon Technologies outside the U.S. 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN ...

Page 21

... Added Intel ManID varient • Updated mechanical information • Table 10 (CFI) clarification Original document, Rev. A ..............................................................................................................................................5/03 www.DataSheet4U.com 09005aef80b10a55 MT28C128564W18D_B.fm - Rev. B, Pub 7/03 EN 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 ADVANCE ©2003 Micron Technology. Inc. ...

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