IRF620FI STMicroelectronics, IRF620FI Datasheet

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IRF620FI

Manufacturer Part Number
IRF620FI
Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
IRF620FI
Manufacturer:
IR
Quantity:
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Part Number:
IRF620FI
Manufacturer:
ST
0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
IRF620
IRF620FI
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
HIGH CURRENT, HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
MOTOR CONTROL, AUDIO AMPLIFIERS
INDUSTRIAL ACTUATORS
DC-DC
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
V
D M
V
V
V
T
P
DG R
I
I
T
ISO
D S
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (cont.) at T
Drain Current (cont.) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
&
DS(on)
DC-AC
200 V
200 V
V
= 0.55
DSS
CONVERTERS
Parameter
< 0.8
< 0.8
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
c
c
= 20 k )
= 25
= 100
= 0)
o
C
o
6 A
4 A
C
o
I
D
C
o
FOR
C
POWER MOS TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
IRF620
TO-220
0.56
24
70
6
4
-65 to 150
1
Value
200
200
150
2
20
3
IRF620FI
ISOWATT220
2000
0.24
24
30
4
2
IRF620FI
IRF620
1
W/
Unit
2
o
o
W
V
V
V
A
A
A
V
C
C
3
o
C
1/9

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IRF620FI Summary of contents

Page 1

... TO-220 FOR INTERNAL SCHEMATIC DIAGRAM IRF620 = 100 0.56 -65 to 150 IRF620 IRF620FI ISOWATT220 Value Unit IRF620FI 200 V 200 0. 2000 150 C 1/9 ...

Page 2

IRF620/FI THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink th c-s T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter t Turn-on Time d(on) t Rise Time r t Turn-off Delay Time d(off ) t Fall Time f Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SOURCE ...

Page 4

IRF620/FI Thermal Impedance for TO-220 Derating Curve for TO-220 Output Characteristics 4/9 Thermal Impedance for ISOWATT220 Derating Curve for ISOWATT220 Transfer Characteristics ...

Page 5

Transconductance Maximum Drain Current vs Temperature Capacitance Variations Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Normalized Breakdown Voltage vs Temperature IRF620/FI 5/9 ...

Page 6

IRF620/FI Normalized On Resistance vs Temperature Unclamped Inductive Load Test Circuit Switching Time Test Circuit 6/9 Source-drain Diode Forward Characteristics Unclamped Inductive Waveforms Gate Charge Test Circuit ...

Page 7

TO-220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 8

IRF620/FI ISOWATT220 MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 Ø 8/9 ...

Page 9

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from ...

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