IRF620FI STMicroelectronics, IRF620FI Datasheet - Page 3

• Manufacturer Part Number: IRF620FI
• Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symbol
Symbol
I
V
SDM
t
t
S D
d(off )
Q
Q
d(on)
I
Q
Q
S D
t
t
t
rr
gs
gd
r
f
g
rr
( )
( )
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Parameter
Parameter
V
R
(see test circuit)
I
V
(see test circuit)
I
I
V
D
SD
SD
DD
DD
DD
G
= 6 A
= 50
= 6 A
= 6 A
= 100 V
= Max Rating x 0.8
= 100 V T
Test Conditions
Test Conditions
V
V
GS
GS
V
di/dt = 100 A/ s
= 10 V
I
GS
D
j
= 0
= 150
= 3 A
= 10 V
Safe Operating Area for ISOWATT220
o
C
Min.
Min.
Typ.
Typ.
135
170
30
70
45
20
6
8
1
Max.
Max.
100
190
1.5
45
65
30
24
6
IRF620/FI
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
C
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