SI4435BDY Vishay Siliconix, SI4435BDY Datasheet - Page 3

• Manufacturer Part Number: SI4435BDY
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Document Number: 72123
S-50694—Rev. C, 18-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 9.1 A
V
On-Resistance vs. Drain Current
= 15 V
GS
10
V
SD
10
= 4.5 V
Q
0.4
g
T
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
J
= 150_C
− Drain Current (A)
Gate Charge
20
0.6
20
0.8
30
V
GS
1.0
= 10 V
30
T
J
40
= 25_C
1.2
1.4
50
40
2400
1800
1200
0.10
0.08
0.06
0.04
0.02
0.00
600
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
−25
rss
D
GS
= 9.1 A
5
= 10 V
2
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
10
− Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
50
15
C
I
D
C
oss
iss
= 9.1 A
6
Si4435BDY
75
20
100
www.vishay.com
8
25
125
150
10
30
3