SI4435BDY Vishay Siliconix, SI4435BDY Datasheet - Page 4

• Manufacturer Part Number: SI4435BDY
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si4435BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
10
− Temperature (_C)
25
−3
I
D
50
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
10
0.01
100
100
0.1
10
−2
1
0.1
Safe Operating Area, Junction-to-Ambient
125
*r
Limited
I
DS(on)
D(on)
Single Pulse
Square Wave Pulse Duration (sec)
T
A
150
V
= 25_C
Limited
DS
10
− Drain-to-Source Voltage (V)
−1
1
BV
DSS
Limited
1
10
30
24
18
12
6
0
10
−2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
I
DM
Limited
100
10
10
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
t
A
Time (sec)
1
= P
1
t
2
DM
Z
thJA
100
thJA
t
t
S-50694—Rev. C, 18-Apr-05
1
2
(t)
Document Number: 72123
10
= 70_C/W
100
600
600