SUD50N04-07L Vishay, SUD50N04-07L Datasheet

no-image

SUD50N04-07L

Manufacturer Part Number
SUD50N04-07L
Description
N-Channel 40-V (D-S) - 175 MOSFET
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N04-07L
Manufacturer:
VISHAY
Quantity:
12 500
Notes:
a.
b.
c.
Document Number: 72344
S-32079—Rev. B, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Duty cycle v 1%.
Surface mounted on 1” FR4 board.
Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
(BR)DSS
ti
40
40
t A bi
(V)
t
b
b
Ordering Information: SUD50N04-07L
J
J
a
0.0074 @ V
0.011 @ V
= 175_C)
= 175_C)
r
Parameter
Parameter
N-Channel 40-V (D-S), 175_C MOSFET
G
DS(on)
Top View
TO-252
D
GS
GS
(W)
= 4.5 V
= 10 V
S
Drain Connected to Tab
A
I
D
= 25_C UNLESS OTHERWISE NOTED)
65
54
(A)
Steady State
T
t v 10 sec
L = 0.1 mH
T
T
New Product
C
C
C
c
= 100_C
= 25_C
= 25_C
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
thJA
thJC
P
, T
I
I
DM
AR
DS
GS
AR
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D Low Threshold
APPLICATIONS
D Motor Control
D Automotive
G
- 12-V Boardnet
N-Channel MOSFET
Typical
D
S
1.9
18
40
- 55 to 175
Limit
"20
100
65
46
40
40
80
65
SUD50N04-07L
c
c
Vishay Siliconix
Maximum
www.DataSheet4U.com
2.3
22
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
V
V
A
A
1

Related parts for SUD50N04-07L

SUD50N04-07L Summary of contents

Page 1

... DS(on) 0.0074 @ 0.011 @ TO-252 Top View Ordering Information: SUD50N04-07L ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Power Dissipation ...

Page 2

... SUD50N04-07L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Drain-to-Source Voltage (V) DS Document Number: 72344 S-32079—Rev. B, 13-Oct-03 New Product 100 0.016 0.012 _ 125 C 0.008 0.004 0.000 SUD50N04-07L Vishay Siliconix www.DataSheet4U.com Transfer Characteristics 125_C C 20 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...

Page 4

... SUD50N04-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Limited By Package 100 T - Case Temperature (_C) ...

Page 5

... THERMAL RATINGS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. Document Number: 72344 S-32079—Rev. B, 13-Oct-03 New Product Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUD50N04-07L Vishay Siliconix www.DataSheet4U.com www.vishay.com 5 ...

Related keywords