SUD50N04-16P Vishay, SUD50N04-16P Datasheet

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SUD50N04-16P

Manufacturer Part Number
SUD50N04-16P
Description
N-Channel 40-V (D-S) - 175 MOSFET
Manufacturer
Vishay
Datasheet
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. Package limited.
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
40
(V)
Ordering Information: SUD50N04-16P-E3 (Lead (Pb)-free)
C
= 25 °C.
0.018 at V
0.016 at V
G
R
Top View
TO-252
DS(on)
D
GS
GS
J
N-Channel 40-V (D-S), 175 °C MOSFET
(Ω)
S
= 4.5 V
= 150 °C)
= 10 V
b
Drain Connected to Tab
I
D
(A)
20
20
a, c
A
= 25 °C, unless otherwise noted
Q
15.6 nC
Steady State
Steady State
T
T
T
T
g
T
T
L = 0.1 mH
T
T
T
T
C
A
C
A
C
C
C
(Typ.)
A
A
A
= 100 °C
= 100 °C
= 100 °C
= 100 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• LCD TV Inverter
• Secondary Synchronous Rectification
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
and UIS Tested
®
Power MOSFET
Typical
3.4
40
G
N-Channel MOSFET
- 55 to 175
Limit
± 16
35.7
17.8
9.8
6.8
2.5
3.1
1.5
20
20
20
40
50
20
20
c
c
c
b
b
b
b
b
D
S
SUD50N04-16P
Maximum
www.DataSheet4U.com
5.3
50
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
°C
W
mJ
V
A
RoHS
COMPLIANT
1

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SUD50N04-16P Summary of contents

Page 1

... GS 40 0.018 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N04-16P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SUD50N04-16P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Gate-to-Source Voltage Document Number: 74477 S-81956-Rev. B, 25-Aug- thru 0.020 0.018 0.016 0.014 0.012 0.010 2500 2000 1500 1000 SUD50N04-16P www.DataSheet4U.com Vishay Siliconix 1.6 1.2 0 125 °C C 0.4 25 ° °C 0.0 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUD50N04-16P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 100 T = 150 ° 0.1 0.01 0.001 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 100 80 60 ...

Page 5

... Document Number: 74477 S-81956-Rev. B, 25-Aug-08 100 µ 100 100 is specified DS(on) 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUD50N04-16P www.DataSheet4U.com Vishay Siliconix 100 Limited DS(on °C C Single Pulse 0.1 0.01 0 ...

Page 6

... SUD50N04-16P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 2.4 1.8 1.2 0.6 0 Ambient Temperature (°C) A Power Derating*, Junction-to-Ambient * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 74477 S-81956-Rev. B, 25-Aug- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50N04-16P www.DataSheet4U.com Vishay Siliconix Notes Duty Cycle ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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