BF2000W Siemens Semiconductor Group, BF2000W Datasheet
BF2000W
Manufacturer Part Number
BF2000W
Description
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BF2000W.pdf
(3 pages)
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Semiconductor Group
Silicon N Channel MOSFET Tetrode
Target data sheet
Type
BF 2000W NDs
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Total power dissipation, T
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Semiconductor Group
Short-channel transistor
For low-noise, gain-controlled
with high S/C quality factor
input stages up to 1 GHz
Marking Ordering Code
Q62702-F1772
S
= 76 °C
Pin Configuration
1 = D
1
1
Symbol
V
I
± I
P
T
T
R
D
DS
tot
stg
ch
thchs
G1/2SM
2 = S
4
3 = G1
- 55 ...+150
Value
3
200
150
12
30
10
280
4 = G2
1
Au -17-1998
BF 2000W
Package
SOT-343
1998-11-01
2
VPS05605
Unit
V
mA
mW
°C
K/W
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BF2000W Summary of contents
Page 1
Silicon N Channel MOSFET Tetrode Target data sheet Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages GHz Type Marking Ordering Code BF 2000W NDs Q62702-F1772 Maximum Ratings Parameter Drain-source voltage Continuos drain current ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Drain-source breakdown voltage µ G1S Gate 1 source breakdown voltage ± mA G1S G2S Gate 2 ...
Page 3
Electrical Characteristics at T Parameter AC characteristics Forward transconductance mA G2S Gate 1 input capacitance mA G2S Gate 2 input ...