BF2000W Siemens Semiconductor Group, BF2000W Datasheet - Page 2

• Manufacturer Part Number: BF2000W
• Description: Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
DC characteristics
Drain-source breakdown voltage
I
Gate 1 source breakdown voltage
± I
Gate 2 source breakdown voltage
± I
Gate 1 source leakage current
± V
Gate 2 source leakage current
± V
Drain current
V
Gate 1-source pinch-off voltage
V
Gate 2-source pinch-off voltage
V
Semiconductor Group
D
DS
DS
DS
G1S
G2S
= 10 µA, - V
G1S
G2S
= 5 V, V
= 5 V, V
= 5 V, I
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
D
G1S
G2S
= 100 µA
G1S
G2S
G1S
= 0 , V
= 4 V, I
G2S
G1S
= 4 V, - V
= V
= 0 V, V
= V
= 0 V, V
DS
G2S
D
DS
= 0
= 200 µA
G2S
DS
= 0
= 4 V
DS
= 0 V
A
= 4 V
= 0 V
= 25 °C; unless otherwise specified.
2
2
Symbol
V
± V
± V
± I
± I
I
V
V
DSS
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
8
8
-
-
-
-
-
Values
typ.
0.3
0.2
-
-
-
-
-
-
max.
Au -17-1998
BF 2000W
12
12
50
50
1
-
-
-
1998-11-01
Unit
V
nA
µA
V