FDC6320 Fairchild Semiconductor, FDC6320 Datasheet

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... Replace NPN & PNP digital transistors. TM SO-8 SuperSOT - unless other wise noted A N-Channel 25 0.22 0.5 (Note 1a) (Note 1b) (Note 1a) (Note 1) October 1997 = 2.7 V. DS(ON -2.7 V. DS(ON) GS < 1.5 V. GS(th) SOIC-16 SOT-223 P-Channel - -0.12 -0.5 0.9 0.7 -55 to 150 6 140 60 Units °C kV °C/W °C/W FDC6320C.Rev C ...

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... MHz Type Min Typ Max N-Ch 25 P- P-Ch - 55° P- 55°C -10 J N-Ch 100 P-Ch -100 o N-Ch -2 P-Ch 1.9 N-Ch 0.65 0.85 1.5 P-Ch -0.65 -1 -1.5 N-Ch 3 =125°C 6 3.1 4 P-Ch 10 =125°C J 7.9 10 N-Ch 0.2 P-Ch -0.05 N-Ch 0.2 P-Ch 0.135 N-Ch 9.5 P-Ch 11 N-Ch 6 P-Ch 7 N-Ch 1.3 P-Ch 1.4 Units µA µ FDC6320C.Rev C ...

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... 0.5 A (Note -0.5 A (Note 180 C 0.005 in of pad of 2oz copper. Type Min Typ Max Units N- P- N- P-Ch 7.4 15 N- N-Ch 0.29 0.4 nC P-Ch 0.23 0.32 N-Ch 0.105 nC P-Ch 0.12 N-Ch 0.045 nC P-Ch 0.03 N-Ch 0.5 A P-Ch -0.5 N-Ch 0.97 1.3 V P-Ch -1 -1.3 is guaranteed by JC FDC6320C.Rev C ...

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... Drain Current and Gate Voltage 0.2A D 25°C 125°C 2 GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55° BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC6320C.Rev C 0 ...

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... C iss 3 C oss rss 0.05 Figure 8. Gate Charge Characteristics 0. Figure 10. Single Pulse Maximum Power V = 5.0V DS 0.1 0.15 0.2 0.25 0 GATE CHARGE (nC SINGLE PULSE R =See note 25° SINGLE PULSE TIME (SEC) Dissipation. FDC6320C.Rev C 0.35 100 300 ...

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... I = -0.05A 25°C A 125 ° ,GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.5 -4.5 0 1.2 FDC6320C.Rev C ...

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... V , DRAIN-SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° SINGLE PULSE TIME (SEC) Dissipation. R ( See Note 1b JA P(pk ( Duty Cycle 100 300 FDC6320C.Rev C 40 100 300 ...