FDC6320 Fairchild Semiconductor, FDC6320 Datasheet - Page 2

• Manufacturer Part Number: FDC6320
• Description: Dual N & P Channel / Digital FET
• Manufacturer: Fairchild Semiconductor

DMOS Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
DSS
DSS
GSS
D(ON)
FS
BV
V
GS(th)
DS(ON)
iss
oss
rss
DSS
GS(th)
DSS
/ T
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(
T
A
= 25
O
C unless otherwise noted )
Conditions
V
V
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
N-Channel
V
P-Channel
V
D
D
D
D
f = 1.0 MHz
f = 1.0 MHz
GS
GS
= 250 µA, Referenced to 25
DS
DS
GS
GS
= -250 µA, Referenced to 25
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= -250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 20 V, V
= 0 V, I
= 0 V, I
=-20 V, V
= 8 V, V
= -8 V, V
= V
= V
= 2.7 V, I
= 4.5 V, I
= -2.7 V, I
= -4.5 V, I
= 2.7 V, V
= -2.7 V, V
= 5 V, I
= -5 V, I
= 10 V, V
= -10 V, V
GS
GS
, I
, I
D
D
D
D
D
D
DS
= 250 µA
= -250 µA
= 0.4 A
= 250 µA
= -250 µA
GS
DS
= -0.2 A
D
D
GS
GS
D
D
= 0 V
DS
GS
= 0 V,
= 0.2 A
= 0.4 A
= 0 V
DS
= -0.05 A
= -0.2 A
= 0 V,
= 0 V,
= 5 V
= 0 V,
= -5 V
T
T
T
T
J
J
J
J
= 55°C
= 55°C
=125°C
=125°C
o
o
C
o
o
C
C
C
Type
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
-0.65
-0.05
0.65
Min
-25
0.2
25
0.135
0.85
10.6
Typ
-2.1
-20
3.8
6.3
3.1
7.9
0.2
9.5
1.3
1.4
25
1.9
15
11
-1
6
7
Max
-100
-1.5
100
-10
1.5
10
13
21
10
-1
1
5
9
4
FDC6320C.Rev C
mV /
mV /
Units
µA
µA
nA
nA
V
V
A
S
pF
pF
pF
o
o
C
C