NTMFS4946N ON Semiconductor, NTMFS4946N Datasheet - Page 3

• Manufacturer Part Number: NTMFS4946N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
200
180
160
140
120
100
80
60
40
20
0
0
10 V
Figure 1. On−Region Characteristics
V
1
DS
Parameter
, DRAIN−TO−SOURCE VOLTAGE (V)
4.5 V
5.0 V
2
V
GS
= 4.2 V
3
(T
J
T
4
= 25°C unless otherwise specified)
J
TYPICAL CHARACTERISTICS
= 25°C
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
G
5
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2.8 V
2.6 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
4.0 V
6
V
3
V
V
GS
I
GS
GS
S
I
D
= 30 A
= 0 V, dI
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
160
140
120
100
80
60
40
20
T
I
0
S
A
0
= 30 A
= 25°C
S
/dt = 100 A/ms,
G
V
DS
DS
= 3.0 W
V
= 15 V,
≥ 10 V
Figure 2. Transfer Characteristics
T
1
T
T
GS
J
J
J
= 125°C
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
= 25°C
T
J
= 125°C
2
Min
0.5
T
J
3
= −55°C
0.005
10.7
18.9
34.2
0.66
21.6
10.2
0.65
1.84
Typ
11.4
7.1
0.8
1.4
8.5
4
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Max
1.0
2.2
5
Unit
nH
ns
ns
nC
W
V
6