NTMFS4946N ON Semiconductor, NTMFS4946N Datasheet - Page 4

• Manufacturer Part Number: NTMFS4946N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

4000
3500
3000
2500
2000
1500
1000
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
500
1.75
1.50
1.25
1.00
0.75
0.50
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
0
2
−50
Figure 3. On−Resistance vs. Gate−to−Source
C
C
C
rss
oss
Figure 5. On−Resistance Variation with
iss
3
−25
ID = 30 A
V
V
Figure 7. Capacitance Variation
GS
GS
5
T
4
, GATE−TO−SOURCE VOLTAGE (V)
= 10 V
J
, JUNCTION TEMPERATURE (°C)
0
5
Temperature
10
25
Voltage
6
50
7
15
8
75
TYPICAL CHARACTERISTICS
ID = 30 A
T
9
J
100
= 25°C
T
20
J
= 25°C
10
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125
11
25
150
4
10,000
12
10
11
0.007
0.006
0.005
0.004
0.003
0.002
0.001
9
8
7
6
5
4
3
2
1
0
1000
100
0
Q
0
gs
10
2
5
V
Figure 4. On−Resistance vs. Drain Current and
DS
Figure 6. Drain−to−Source Leakage Current
Drain−to−Source Voltage vs. Total Charge
15
10
4
V
Q
V
V
GS
V
gd
DS
GS
GS
20
15
Figure 8. Gate−to−Source and
= 0 V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
6
= 11.5 V
= 4.5 V
g
, TOTAL GATE CHARGE (nC)
I
25
20
D
, DRAIN CURRENT (A)
8
Gate Voltage
QT
25
30
vs. Voltage
T
T
J
10
J
= 150°C
= 125°C
30
35
12
35
40
V
GS
14
ID = 30 A
T
40
J
45
= 25°C
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45
16
T
50
J
= 25°C
50
18
55
20
18
16
14
12
10
8
6
4
2
0
60
20