FS7KM-18 Mitsubishi Electric Semiconductor, FS7KM-18 Datasheet - Page 2

• Manufacturer Part Number: FS7KM-18
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
50
40
30
20
10
20
16
12
POWER DISSIPATION DERATING CURVE
0
8
4
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
P
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
D
= 40W
10
50
T
Pulse Test
(TYPICAL)
C
20
= 25°C
100
(Tch = 25 C)
30
I
I
V
V
I
I
I
I
V
V
R
I
Channel to case
D
GS
D
D
D
D
S
GS
DS
DS
DD
GEN
= 3A, V
= 1mA, V
= 1mA, V
= 3A, V
= 3A, V
= 3A, V
= 100 A, V
150
= 900V, V
= 25V, V
= 25V, V
= 200V, I
V
= R
GS
C
40
(°C)
= 20V
DS
GS
GS
GS
DS
GS
10V
GS
DS
5V
4V
(V)
GS
= 10V
= 10V
= 10V
= 50
= 0V
D
DS
GS
200
= 0V
= 10V
50
= 3A, V
= 0V, f = 1MHz
DS
= 0V
= 0V
= 0V
Test conditions
GS
= 10V,
10
10
10
–1
3
2
7
5
3
2
7
5
3
2
7
5
3
5
4
3
2
1
0
1
0
3 5 7
0
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
T
Pulse Test
DRAIN-SOURCE VOLTAGE V
C
= 25°C
T
Single Pulse
OUTPUT CHARACTERISTICS
C
10
= 25°C
MITSUBISHI Nch POWER MOSFET
4
1
2
HIGH-SPEED SWITCHING USE
V
3 5 7
GS
(TYPICAL)
8
= 20V
Min.
900
10V
4.2
—
—
—
—
—
—
—
—
—
—
—
—
—
10
5V
30
2
2
12
2
4.5V
3 5 7
P
Limits
D
1380
1.54
4.62
Typ.
140
185
7.0
1.0
FS7KM-18A
28
25
28
46
—
—
—
—
—
= 40W
3
16
10
DS
DS
tw = 10ms
100ms
1ms
10ms
100ms
DC
3.5V
3
4V
(V)
(V)
2
Max.
2.00
6.00
3.13
1.5
20
—
—
—
—
—
—
—
—
—
—
3
10
1
4
Feb.1999
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A