NTB45N06L ON Semiconductor, NTB45N06L Datasheet - Page 4

• Manufacturer Part Number: NTB45N06L
• Description: N-Channel TO-220 and D2PAK
• Manufacturer: ON Semiconductor

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0.046
0.042
0.038
0.034
0.026
0.022
0.018
0.014
0.03
80
70
60
50
40
30
20
10
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
−50
0
0
Figure 3. On−Resistance vs. Gate−to−Source
V
GS
V
−25
I
V
DS
D
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
10
GS
V
= 5 V
= 22.5 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 5 V
T
= 10 V
J
0
, JUNCTION TEMPERATURE ( C)
1
20
I
D
, DRAIN CURRENT (AMPS)
25
30
Temperature
V
T
T
GS
T
J
50
J
Voltage
J
= 100 C
= −55 C
V
= 25 C
= 9 V
2
40
GS
V
GS
75
= 8 V
V
= 7 V
GS
50
100
= 6 V
V
NTP45N06L, NTB45N06L
GS
3
60
V
V
125
GS
GS
V
= 5.5 V
V
GS
GS
= 3.5 V
= 4.5 V
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= 4 V
= 5 V
70
150
175
4
80
4
10000
0.046
0.042
0.038
0.034
0.026
0.022
0.018
1000
0.03
100
70
60
50
40
30
80
20
10
10
0
1.8
0
0
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
T
V
T
V
J
J
DS
V
GS
V
= 100 C
10
= 25 C
DS
GS
> = 10 V
10
Figure 2. Transfer Characteristics
= 0 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.6
20
I
D
, DRAIN CURRENT (AMPS)
20
30
Gate Voltage
T
3.4
vs. Voltage
J
T
T
T
V
J
J
J
= −55 C
V
GS
= 150 C
= 125 C
= 100 C
GS
40
30
= 10 V
= 5 V
4.2
50
40
60
5
50
70
5.8
80
60