NTB45N06L ON Semiconductor, NTB45N06L Datasheet - Page 5

• Manufacturer Part Number: NTB45N06L
• Description: N-Channel TO-220 and D2PAK
• Manufacturer: ON Semiconductor

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1000
100
0.1
2800
2400
2000
1600
1200
4000
3600
3200
1000
10
800
400
100
1
0.10
10
0
10
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
GS
C
C
C
V
I
V
D
Figure 9. Resistive Switching Time Variation
V
iss
rss
DS
GS
= 25 C
V
DS
= 45 A
= 15 V
DS
= 30 V
= 5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
= 0 V
Figure 7. Capacitance Variation
V
R
Thermal Limit
Package Limit
GS
DS(on)
R
Safe Operating Area
t
t
0
d(off)
G
d(on)
1
vs. Gate Resistance
, GATE RESISTANCE (W)
V
t
t
V
Limit
r
f
DS
GS
dc
10 ms
= 0 V
5
(VOLTS)
10
1 ms
10
C
C
C
100 ms
10
oss
iss
rss
15
NTP45N06L, NTB45N06L
T
J
20
= 25 C
http://onsemi.com
100
100
25
5
280
240
200
160
120
48
40
32
24
16
80
40
5
4
3
2
1
0
8
0
0
6
0.6
0
25
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
V
T
0.64
Drain−to−Source Voltage vs. Total Charge
Q
T
V
J
I
GS
D
J
1
SD
= 25 C
, STARTING JUNCTION TEMPERATURE ( C)
= 45 A
50
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
4
0.68
Starting Junction Temperature
Figure 8. Gate−to−Source and
Q
g
0.72
, TOTAL GATE CHARGE (nC)
75
8
0.76
100
Q
0.8
Q
12
2
T
0.84
125
16
0.88
I
T
D
0.92
J
V
150
= 45 A
= 25 C
20
GS
0.96
175
24
1