BF1005SW Infineon Technologies AG, BF1005SW Datasheet

no-image

BF1005SW

Manufacturer Part Number
BF1005SW
Description
Silicon N-Channel MOSFET Tetrode
Manufacturer
Infineon Technologies AG
Datasheet
Silicon N-Channel MOSFET Tetrode
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
T
Storage temperature
Channel temperature
Type
BF1005S
BF1005SR
BF1005SW
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
AGC
HF
Input
S
S
For low noise, high gain controlled
Operating voltage 5 V
Integrated biasing network
input stages up to 1 GHz
76 °C, BF1005S, BF1005SR
94 °C, BF1005SW
G2
G1
Package
SOT143
SOT143R
SOT343
GND
Drain
1=S
1=D
1=D
HF Output
+ DC
EHA07215
2=D
2=S
2=S
1
Pin Configuration
3=G2
3=G1
3=G1
Symbol
V
I
+V
P
T
T
D
I
stg
ch
DS
tot
G1/2SM
G1SE
4=G1
4=G2
4=G2
-
-
-
-55 ... 150
Value
200
200
150
25
10
8
3
-
-
-
BF1005S...
Feb-18-2004
Marking
NZs
NZs
NZ
Unit
V
mA
V
mW
°C

Related parts for BF1005SW

BF1005SW Summary of contents

Page 1

... Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation T 76 °C, BF1005S, BF1005SR °C, BF1005SW S Storage temperature Channel temperature Note not recommended to apply external DC-voltage on Gate 1 in active mode. HF Output + DC EHA07215 Pin Configuration ...

Page 2

... Thermal Resistance Parameter 1) Channel - soldering point BF1005S, BF1005SR BF1005SW Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage I = 650 µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2 source breakdown voltage mA G2S G1S Gate1-source leakage current ...

Page 3

Electrical Characteristics Parameter AC Characteristics (verified by random sampling) Forward transconductance 4 G2S Gate1 input capacitance MHz DS G2S Output capacitance ...

Page 4

... Drain current G2S 0.5 1 1 Total power dissipation P tot S BF1005SW 220 mA 180 160 140 120 100 105 120 °C 150 Insertion power gain |S |² -15 -25 -35 -45 -55 - 3.5 4 ...

Page 5

Forward transfer admittance | G2S 0.5 1 1.5 2 2.5 Output capacitance C dss f = 200MHz 1.5 1 0.5 ...

Related keywords