BF1005SW Infineon Technologies AG, BF1005SW Datasheet - Page 2

• Manufacturer Part Number: BF1005SW
• Description: Silicon N-Channel MOSFET Tetrode
• Manufacturer: Infineon Technologies AG

1 For calculation of R
Thermal Resistance
Parameter
Channel - soldering point
BF1005S, BF1005SR
BF1005SW
Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2 source breakdown voltage
Gate1-source leakage current
V
Gate 2 source leakage current
Drain current
V
Operating current (selfbiased)
V
Gate2-source pinch-off voltage
V
D
I
V
G1S
DS
DS
DS
G1S
G2S
= 650 µA, V
G2S
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 10 mA, V
= 10 mA, V
= 8 V, V
D
G1S
G2S
G2S
= 100 µA
G1S
G1S
thJA
= 0 , V
= 4 V
G1S
G2S
= 0
= 0 , V
= 0 , V
please refer to Application Note Thermal Resistance
= 0 , V
= 0 , V
G2S
1)
G2S
DS
= 4 V
DS
DS
= 0
= 0
= 0
= 0
2
Symbol
V
+V
+I
I
I
V
DSS
DSO
V
I
(BR)DS
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
12
8
8
8
-
-
-
-
Values
Value
typ.
100
13
370
280
1
-
-
-
-
-
max.
BF1005S...
800
Feb-18-2004
12
13
50
16
-
-
-
Unit
V
µA
nA
µA
mA
V
Unit
K/W