NE33284A-SL NEC, NE33284A-SL Datasheet - Page 2

• Manufacturer Part Number: NE33284A-SL
• Description: L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
PARAMETER
transistor with AlGaAs shottky barrier gate.
SYMBOL
V
I
I
GS(off)
NF
GSO
G
DSS
g
m
a
A
= 25 ˚C)
MIN.
–0.2
13.0
9.5
15
45
TYP.
–0.8
0.75
0.35
10.5
15.0
0.5
40
70
MAX.
–2.0
0.45
1.0
10
80
UNIT
mA
mS
dB
dB
V
A
V
V
V
V
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 4 GHz
GS
DS
DS
DS
= –3 V
= 2 V, V
= 2 V, I
= 2 V, I
TEST CONDITIONS
D
D
GS
= 10 mA
= 100 A
= 0
V
I
D
DS
= 10 mA
= 2 V
NE33284A