BLF2022-125 Philips Semiconductors, BLF2022-125 Datasheet - Page 2

• Manufacturer Part Number: BLF2022-125
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
RF performance at T
3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2003 Mar 07
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
single carrier W-CDMA
V
V
I
T
T
D
SYMBOL
Typical W-CDMA performance at a supply voltage of
28 V and I
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 19%
– ACPR = 42 dBc at 3.84 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
stg
j
MODE OF OPERATION
DS
GS
UHF power LDMOS transistor
DQ
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
of 1 A
h
= 25 C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,
2110 to 2170
PARAMETER
(MHz)
f
CAUTION
V
(V)
28
2
DS
PINNING - SOT634A
PIN
65
1
2
3
P
(W)
L avg
30
MIN.
Fig.1 Simplified outline.
Top view
drain
gate
source, connected to flange
typ 12
(dB)
G
65
tbd
+150
200
15
p
MAX.
DESCRIPTION
1
2
Objective specification
BLF2022-125
typ 19
MBL367
(%)
D
3
V
V
A
C
C
UNIT
typ 42
(dBc)
d
im