BLF2022-125 Philips Semiconductors, BLF2022-125 Datasheet - Page 3

• Manufacturer Part Number: BLF2022-125
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
2003 Mar 07
R
V
V
I
I
g
R
C
SYMBOL
SYMBOL
j
DSS
GSS
fs
= 25 C unless otherwise specified.
(BR)DSS
GSth
UHF power LDMOS transistor
th j-c
DSon
rss
thermal resistance from junction to case
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
PARAMETER
V
V
V
V
V
V
V
GS
DS
GS
GS
DS
GS
GS
= 10 V; I
= 10 V; I
= 0; I
= 0; V
= 15 V; V
= V
= 0; V
note 1
3
GSth
CONDITIONS
D
DS
DS
= 2.5 mA
+ 9 V; I
D
D
= 26 V
= 26 V; f = 1 MHz
= 240 mA
= 16 A
DS
CONDITIONS
= 0
D
= 8 A
4.5
65
MIN.
9.5
0.07
tbd
TYP.
BLF2022-125
VALUE
Objective specification
0.55
5.5
10
40
MAX.
UNIT
K/W
V
V
nA
S
pF
UNIT
A