BLF2022-30 Philips Semiconductors, BLF2022-30 Datasheet - Page 3

• Manufacturer Part Number: BLF2022-30
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2003 Feb 24
V
V
I
T
T
R
V
V
I
I
I
g
R
C
2-tone, class-AB
MODE OF OPERATION
j
D
DSS
DSX
GSS
fs
SYMBOL
stg
j
SYMBOL
SYMBOL
DS
GS
= 25 C unless otherwise specified.
(BR)DSS
GSth
UHF power LDMOS transistor
th j-h
DSon
rs
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
thermal resistance from junction to heatsink T
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
DS
f
1
= 28 V; I
PARAMETER
= 2170; f
(MHz)
DQ
f
2
= 2170.1
= 240 mA; P
PARAMETER
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
L
V
= 30 W; f = 2170 MHz.
(V)
28
h
= 10 V; I
= 10 V; I
DS
= 0; I
= 0; V
= V
= 15 V; V
= V
= 0; V
= 25 C; R
3
GSth
GSth
CONDITIONS
D
h
DS
DS
= 25 C; note 1
= 0.7 mA
+ 9 V; V
+ 9 V; I
D
D
= 28 V
= 28 V; f = 1 MHz
(mA)
240
I
= 70 mA
= 2.5 A
DS
DQ
th j-c
= 0
CONDITIONS
D
DS
= 1.85 K/W; unless otherwise specified.
= 2.5 A
30 (PEP)
= 10 V
(W)
P
L
4.5
9
65
MIN.
65
MIN.
(dB)
>11
G
p
2
0.3
1.7
TYP.
65
4.5
+150
200
BLF2022-30
Product specification
VALUE
15
MAX.
1.85
>30
(%)
D
5.5
5
11
MAX.
V
V
A
C
C
(dBc)
UNIT
UNIT
K/W
V
V
A
nA
S
pF
d
UNIT
A
im
25