BLF2022-30 Philips Semiconductors, BLF2022-30 Datasheet - Page 4

• Manufacturer Part Number: BLF2022-30
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
2003 Feb 24
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.2
V
f
(1) I
(2) I
Fig.4
1
1
DS
DS
= 2170 MHz; f
= 2170 MHz; f
(dB)
(dB)
G p
G p
= 28 V; I
= 28 V; T
15
10
DQ
DQ
15
10
5
0
5
0
0
0
= 290 mA.
= 240 mA.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
DQ
h
= 240 mA; T
2
2
25 C;
10
10
= 2170.1 MHz.
= 2170.1 MHz.
(1)
(3) I
(4) I
G p
(2)
(3)
DQ
DQ
20
20
h
= 190 mA.
= 190 mA.
25 C;
G p
D
D
30
30
(4)
P L (PEP) (W)
P L (PEP) (W)
(5) I
(6) I
(5)
40
40
DQ
DQ
(6)
MLD935
MLD937
= 240 mA.
= 290 mA.
50
50
60
40
20
0
60
40
20
0
(%)
(%)
D
D
4
handbook, halfpage
handbook, halfpage
V
f
Fig.3
V
f
(1) I
Fig.5
1
1
DS
(dBc)
DS
(dBc)
= 2170 MHz; f
d im
= 2170 MHz; f
d im
= 28 V; I
= 28 V; T
20
40
60
80
20
40
60
80
DQ
0
0
0
0
= 190 mA.
Intermodulation distortion as a function of
peak envelope load power; typical values.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
DQ
h
= 240 mA; T
2
2
25 C;
10
10
= 2170.1 MHz.
= 2170.1 MHz.
(1)
(2)
(3)
(2) I
20
DQ
20
h
= 240 mA.
25 C;
d 3
d 5
d 7
30
30
P L (PEP) (W)
P L (PEP) (W)
BLF2022-30
Product specification
(3) I
40
40
DQ
MLD938
MLD936
= 290 mA.
50
50