BLF2048 Philips Semiconductors, BLF2048 Datasheet - Page 3

• Manufacturer Part Number: BLF2048
• Description: UHF push-pull power LDMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under nominal 2-tone RF operating conditions.
CHARACTERISTICS
T
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
2000 Feb 17
R
R
V
V
I
I
I
g
R
C
2-tone, class-AB
j
DSS
DSX
GSS
MODE OF OPERATION
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C; per section unless otherwise specified.
DSon
rs
UHF push-pull power LDMOS transistor
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
DS
PARAMETER
= 26 V; f = 2200 MHz, P
f
1
= 2200; f
PARAMETER
(MHz)
f
2
= 2200.1
L
= 120 W (CW).
V
V
V
V
V
V
V
V
note 1
GS
DS
GS
GS
GS
DS
GS
GS
V
(V)
26
28
DS
h
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= V
= 0; V
= 25 C; R
3
GSth
GSth
CONDITIONS
D
DS
DS
= 1.4 mA
2 x 400
2 x 400
+ 9 V; V
+ 9 V; I
D
D
(mA)
= 26 V
= 26 V; f = 1 MHz;
I
DQ
= 140 mA
= 5 A
DS
P
th j-h
L
= 0
= 120 W; T
D
DS
= 0.5 K/W; unless otherwise specified.
= 5 A
120 (PEP)
140 (PEP)
= 10 V
CONDITIONS
(W)
P
L
mb
= 50 C, note 1
65
1.5
18
MIN.
typ. 11.2
(dB)
>10
G
p
4
0.17
3.4
Preliminary specification
TYP.
typ. 31
>30
(%)
VALUE
BLF2048
D
3.5
10
250
MAX.
0.35
0.15
typ. 25
(dBc)
V
V
A
nA
S
pF
d
UNIT
UNIT
K/W
K/W
A
im
26