NE856 NEC, NE856 Datasheet - Page 2

• Manufacturer Part Number: NE856
• Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: NEC

ELECTRICAL CHARACTERISTICS
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width ≤ 350 µs, duty cycle ≤ 2% pulsed.
3. C
4. With 2.5 cm
ELECTRICAL CHARACTERISTICS
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
R
SYMBOLS
|S
TH (J-A)
I
I
R
guard circuit. The emitter terminal shall be connected to the guard terminal.
h
C
NF
G
CBO
EBO
|S
21E
P
f
TH (J-A)
FE
re
T
I
I
re
h
A
T
CBO
C
NF
G
EBO
21E
P
f
FE
T
measurement employs a three terminal capacitance bridge incorporating a
|
re
A
T
2
|
2
Gain Bandwidth Product at
V
V
Noise Figure at
V
V
Associated Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance
V
V
Total Power Dissipation
Thermal Resistance (J-A)
CE
CE
CE
CE
CE
CE
CE
CE
CB
CB
2
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
Noise Figure at
V
Associated Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance
V
Total Power Dissipation
Thermal Resistance (J to A)
EIAJ
x 0.7 mm ceramic substrate (infinite heatsink).
EIAJ
CB
EB
CE
CE
CE
CE
CE
CB
= 10 V, I
= 3 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 3 V, I
= 3 V, I
= 10 V, I
CB
EB
= 15 V, I
= 1 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
PACKAGE OUTLINE
1
PACKAGE OUTLINE
1
REGISTERED NUMBER
= 15 V, I
= 1 V, I
REGISTERED NUMBER
PART NUMBER
PART NUMBER
C
C
E
C
C
C
C
C
C
E
= 7 mA
= 7 mA
= 0 mA, f = 1 MHz
C
= 0 mA, f = 1 MHz
= 20 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 2 GHz
= 7 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 20 mA
E
C
C
C
C
C
E
= 0 mA
C
= 0 mA
= 0 mA, f = 1 MHz
= 20 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 20 mA
E
= 0 mA
= 0
2
f = 2 GHz
3
at
2
at
f = 2 GHz
3
at
f = 2 GHz
f = 2 GHz
mA
at
f = 2 GHz
°C/W
GHz
GHz
mW
dB
dB
dB
dB
dB
dB
µA
µA
pF
pF
(T
(T
UNITS
°C/W
GHz
A
mW
A
dB
dB
dB
dB
dB
dB
µA
µA
pF
= 25°C)
= 25°C)
50 120 300
7
00 (CHIP)
NE85600
7.0
1.1
2.1
0.5
10
9
MIN
50
NE85633
2SC3356
700
1.0
1.0
1.0
TYP MAX MIN
11.5
0.55
120
7.0
1.4
33
9
11
50
NE85618
2SC5011
300
200
625
2.0
1.0
1.0
1.0
120 300
6.5
1.4
2.1
0.5
18
13
13
7
7
50
150
833
1.0
1.0
0.9
NE85634
2SC3357
TYP MAX MIN TYP MAX MIN
0.65
120
6.5
1.4
9.5
34
3.0
80
NE85619
2SC5006
2000
62.5
12.5
120 160
300
4.5
1.4
2.2
6.5
0.7
1.0
1.0
1.0
19
12
4
4
1000
100
1.0
1.0
1.5
50
7
NE85635
2SC3603
40
120
7.0
2.1
0.5
35
10
9
NE85630
2SC4226
110 250
4.5
1.3
2.2
0.7
30
12
12
6
6
300
580
590
3.4
1.0
1.0
1.0
150
833
1.0
1.0
1.5
50
NE85639/39R
50
2SC4093
NE85632
2SC3355
TYP MAX
13.5
120
9.0
1.5
8.5
0.5
39
13
0.65 1.0
7
120 300
6.5
1.4
9.5
32
10
300
200
500
2.1
1.0
1.0
0.9
600
210
1.0
1.0