NE856 NEC, NE856 Datasheet - Page 20

• Manufacturer Part Number: NE856
• Description: NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
• Manufacturer: NEC

NE85635 NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
SCHEMATIC
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.96e-4
2.8e-12
1.1e-12
32e-16
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
BASE
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
CBEX_PKG
RB_PKG
0.1 ohms
0.1pF
10e-12
1e-9
0.55
0.75
1.11
0.3
0.5
Q1
0.2
10
LB_PKG
0.15nH
0
0
6
0
0
3
0
1
0.05pF
CBE_PKG
0.77nH
LB
(1)
0.09pF
CCB
CCB_PKG
0.05pF
68100
RE_PKG
0.1 ohms
LE_PKG
0.23nH
EMITTER
CCE
0.16pF
0.45nH
LC
Q1
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
0.15nH
LC_PKG
CCE_PKG
0.2pF
CCEX_PKG
Parameter
time
capacitance
inductance
resistance
voltage
current
0.2pF
0.1 ohms
RC_PKG
0.05 to 5.0 GHz
V
11/1/96
CE
= 10 V, I
COLLECTOR
NE856 SERIES
C
= 7 mA to 30 mA
seconds
farads
henries
ohms
volts
amps
Units