PBSS4350S Philips Semiconductors, PBSS4350S Datasheet - Page 3

• Manufacturer Part Number: PBSS4350S
• Description: 50 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 19
R
I
I
h
V
R
V
V
f
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
th j-a
CEsat
c
50 V low V
= 25 C unless otherwise specified.
thermal resistance from junction to
ambient
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage V
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
PARAMETER
NPN transistor
0.02.
V
V
V
V
V
I
I
I
I
I
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 100 mA; V
= 5 V; I
= 50 V; I
= 50 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
in free air; note 1
B
B
B
B
= 50 mA
= 200 mA; note 1
= 200 mA; note 1
= 200 mA; note 1
C
C
C
C
C
E
E
E
CONDITIONS
= 0
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 1 A; note 1
B
= 0
= 0; T
= I
CE
3
= 50 mA
e
CONDITIONS
= 5 V; f = 100 MHz
= 0; f = 1 MHz
j
= 150 C
200
200
100
100
MIN.
VALUE
150
110
TYP.
PBSS4350S
Product specification
100
50
100
90
170
290
<145
1.2
1.1
30
MAX.
UNIT
K/W
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A