PBSS4350S Philips Semiconductors, PBSS4350S Datasheet - Page 5

• Manufacturer Part Number: PBSS4350S
• Description: 50 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2001 Nov 19
handbook, halfpage
handbook, halfpage
(mA)
50 V low V
R CEsat
T
(1) I
(2) I
(3) I
(4) I
Fig.6
I
(1) T
Fig.8
I C
C
amb
( )
/I
1200
1000
10
10
B
800
600
400
200
10
10
= 20.
B
B
B
B
= 25 C.
10
amb
0
1
10
3
2
1
2
= 3.96 nA.
= 3.63 nA.
= 3.30 nA.
= 2.97 nA.
0
= 150 C. (2) T
Collector current as a function of
collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
1
0.4
1
CEsat
(5) I
(6) I
(7) I
(8) I
amb
0.8
10
B
B
B
B
= 25 C. (3) T
NPN transistor
= 2.64 nA.
= 2.31 nA.
= 1.98 nA.
= 1.65 nA.
1.2
10
(1)
(3)
2
amb
(2)
10
1.6
(9) I
(10) I
(11) I
(12) I
= 55 C.
3
I C (mA)
V CE (V)
MLD764
B
B
B
B
MLD762
= 1.32 nA.
= 0.99 nA.
= 0.66 nA.
= 0.33 nA.
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
4
5
handbook, halfpage
T
(1) I
(2) I
(3) I
(4) I
Fig.7
amb
(A)
I C
B
B
B
B
= 25 C.
5
4
3
2
1
0
= 150 mA.
= 135 mA.
= 120 mA.
= 105 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
0.4
(5) I
(6) I
(7) I
(8) I
0.8
B
B
B
B
= 90 mA.
= 75 mA.
= 60 mA.
= 45 mA.
(1)
1.2
PBSS4350S
Product specification
1.6
(9) I
(10) I
V CE (V)
B
B
MLD763
= 30 mA.
= 15 mA.
2
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)