BCP52M Siemens Semiconductor Group, BCP52M Datasheet
BCP52M
Manufacturer Part Number
BCP52M
Description
PNP Silicon AF Transistor (For AF driver and output stages High collector current)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BCP52M.pdf
(4 pages)
Semiconductor Group
PNP Silicon AF Transistor
Type
BCP 51M
BCP 52M
BCP 53M
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP 54M...BCP 56M(NPN)
Marking Ordering Code Pin Configuration
AAs
AEs
AHs
1)
Q62702-C2592
Q62702-C2593
Q62702-C2594
S
77 °C
1 = B
Symbol
V
V
V
I
I
I
I
P
T
T
R
R
C
CM
B
BM
CEO
CBO
EBO
tot
j
stg
thJA
thJS
1
1
2 = C
BCP 51M
45
45
3 = E
5
5
-65...+150
BCP 52M
BCP 51M ... BCP 53M
4 n.c.
100
200
150
1.5
1.7
60
60
5
1
98
43
4
5 = C
BCP 53M Unit
100
80
5
1
Au -11-1998
VPW05980
Package
SCT-595
1998-11-01
2
V
mA
A
mA
W
°C
K/W
3
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BCP52M Summary of contents
Page 1
PNP Silicon AF Transistor For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 54M...BCP 56M(NPN) Type Marking Ordering Code Pin Configuration BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593 BCP 53M AHs Q62702-C2594 ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...
Page 3
Total power dissipation P * Package mounted on epoxy 2000 mW 1600 1400 1200 1000 T 800 A 600 400 200 Permissible Pulse Load K ...
Page 4
Collector cutoff current 30V CB BCP 51... CBO Base-emitter saturation voltage BEsat ...