BCP52M Siemens Semiconductor Group, BCP52M Datasheet - Page 2

• Manufacturer Part Number: BCP52M
• Description: PNP Silicon AF Transistor (For AF driver and output stages High collector current)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
Collector-emitter saturation voltage1)
I
Base-emitter voltage 1)
I
AC Characteristics
Transition frequency
I
1) Pulse test: t 300 s, D = 2%
Semiconductor Group
C
C
E
C
C
C
C
C
C
CB
CB
= 10 mA, I
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 50 mA, V
= 30 V, I
= 30 V, I
C
CE
B
E
E
B
CE
= 0
B
= 0
= 0
= 0 , T
CE
CE
CE
= 0
= 2 V
= 50 mA
= 10 V, f = 100 MHz
= 2 V
= 2 V
= 2 V
A
= 150 °C
A
= 25°C, unless otherwise specified.
BCP 51M
BCP 52M
BCP 53M
BCP 51M
BCP 52M
BCP 53M
2
2
Symbol
V
V
V
I
I
h
h
h
V
V
f
CBO
CBO
T
FE
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
45
60
80
45
60
25
40
25
5
-
-
-
-
-
BCP 51M ... BCP 53M
Values
typ.
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
100
250
0.5
Au -11-1998
20
-
-
-
-
1
-
-
-
-
-
-
1998-11-01
Unit
V
nA
µA
-
V
MHz