BCP55-10 Philips Semiconductors, BCP55-10 Datasheet - Page 2

• Manufacturer Part Number: BCP55-10
• Description: NPN medium power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 08
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
High current (max. 1 A)
Low voltage (max. 80 V).
Switching.
CBO
CEO
EBO
tot
NPN medium power transistors
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BCP54
BCP55
BCP56
BCP54
BCP55
BCP56
PARAMETER
open emitter
open base
open collector
T
amb
2
25 C; note 1
PINNING
handbook, halfpage
CONDITIONS
Fig.1
PIN
2, 4
1
3
Top view
Simplified outline (SOT223) and symbol.
1
base
collector
emitter
BCP54; BCP55; BCP56
2
4
3
DESCRIPTION
65
65
MIN.
MAM287
Product specification
1
45
60
100
45
60
80
5
1
1.5
0.2
1.33
+150
150
+150
MAX.
2, 4
3
2
.
V
V
V
V
V
V
V
A
A
A
W
C
C
C
UNIT