LP3000 Filtronic Compound Semiconductors, LP3000 Datasheet
LP3000
Manufacturer Part Number
LP3000
Description
2W Power PHEMT
Manufacturer
Filtronic Compound Semiconductors
Datasheet
1.LP3000.pdf
(2 pages)
Phone: (408) 988-1845
Fax: (408) 970-9950
FEATURES
DESCRIPTION AND APPLICATIONS
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged
ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other high-performance power amplifiers.
ELECTRICAL SPECIFICATIONS @ T
frequency=18 GHz
Power Gain at 1-dB Compression
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Source Leakage Current
33.5 dBm Output Power
at 1-dB Compression at 18 GHz
7 dB Power Gain at 18 GHz
30.5 dBm Output Power
at 1-dB Compression at 3.3V
45% Power-Added Efficiency
Power at 1-dB Compression
Power-Added Efficiency
Gate-Source Breakdown
Gate-Drain Breakdown
Thermal Resistivity
Voltage Magnitude
Voltage Magnitude
Pinch-Off Voltage
Transconductance
Parameter
m by 3000
m Schottky barrier gate. The recessed “mushroom” gate structure
Symbol
|V
|V
G-1dB
P-1dB
I
PAE
I
I
MAX
BDGD
G
GSO
BDGS
DSS
V
M
JC
P
|
|
http:// www.filss.com
V
V
V
V
DS
DS
DS
Ambient
V
V
V
DS
PAD (4X)
PAD (4X)
PAD (2x)
SOURCE
DS
DS
DS
DRAIN
= 8 V; I
= 8 V; I
= 8 V; I
BOND
BOND
BOND
Test Conditions
GATE
= 2 V; I
I
= 2 V; V
= 2 V; V
= 2 V; V
I
GD
V
GS
GS
= 25° ° C
= 15 mA
= 15 mA
= -5 V
DS
DS
DS
DS
= 50% I
= 50% I
= 50% I
GS
GS
GS
= 10 mA
= 0 V
= 1 V
= 0 V
DIE SIZE: 28.3X16.5 mils (720x420 m)
DIE THICKNESS: 2.6 mils (65 m)
BONDING PADS: 1.9X2.4 mils (50x60 m)
DSS
DSS
DSS
-0.25
Min
800
725
-12
-12
33
4
2 W P
1060
1700
Revised: 1/18/01
Email: sales@filss.com
Typ
33.5
900
-1.2
-15
-16
45
15
20
6
LP3000
OWER
Max
1100
125
-2.0
PHEMT
Units
dBm
mA
mA
C/W
mS
dB
%
V
V
V
A
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LP3000 Summary of contents
Page 1
... The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged ceramic package and in the low cost plastic SOT89 package. Typical applications include commercial and other high-performance power amplifiers. ...
Page 2
... TOT DC IN OUT Bias Power Input Power Output Power OUT P = 6.0W – (0.040W TOT HS where T = heatsink or ambient temperature. HS http:// www.filss.com LP3000 OWER Min Max 12 -5 2xI DSS 30 1.2 175 — -65 175 6.0 Revised: 1/18/01 Email: sales@filss.com PHEMT Units ...