BCW61CLT1 Leshan Radio Company, BCW61CLT1 Datasheet - Page 3

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BCW61CLT1

Manufacturer Part Number
BCW61CLT1
Description
General Purpose Transistors(PNP Silicon)
Manufacturer
Leshan Radio Company
Datasheet
7.0
5.0
3.0
2.0
1.0
1.0M
500k
200k
100k
1.0M
500k
200k
100k
10
5.0k
2.0k
1.0k
5.0k
2.0k
1.0k
500
200
100
50k
20k
10k
50k
20k
10k
500
200
100
10
10
10
1.0mA
20
0.5 dB
20
20
Figure 3. Narrow Band, 100 Hz
Figure 1. Noise Voltage
I
I
C
C
50
, COLLECTOR CURRENT ( A)
f, FREQUENCY (Hz)
30
30
, COLLECTOR CURRENT ( A)
100
Figure 5. Wideband
0.5 dB
I
30 A
100 A
C
50 70 100
50 70 100
300 A
=10 A
200
1.0 dB
TYPICAL NOISE CHARACTERISTICS
500 1.0k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200
200
(V
CE
10 Hz to 15.7KHz
1.0 dB
2.0k
300
300
R
2.0 dB
= –5.0 Vdc, T
NOISE FIGURE CONTOURS
S
3.0 dB
2.0 dB
~ ~
5.0 dB
(V
500 700 1.0K
500 700 1.0K
0
3.0 dB
5.0dB
5.0k
CE
= –5.0 Vdc, T
10 k
BCW61BLT1 BCW61CLT1 BCW61DLT1
A
= 25°C)
1.0M
500k
200k
100k
5.0k
2.0k
1.0k
50k
20k
10k
500
200
100
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
Noise Figure is Defined as:
NF = 20 log
e
I
K = Boltzman’s Constant (1.38 x 10
T = Temperature of the Source Resistance (°K)
R
n
n
s
10
10
A
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Source Resistance (
= 25°C)
LESHAN RADIO COMPANY, LTD.
20
20
10
( –––––––––––––––)
Figure 4. Narrow Band, 1.0 kHz
Figure 2. Noise Current
30
I
50
e
C
n
, COLLECTOR CURRENT ( A)
2
f, FREQUENCY (Hz)
100
+4KTR
50 70 100
4KTR
0.5 dB
I
C
=1.0mA
300 A
200
)
100 A
S
+I
S
30 A
10 A
n
2
R
500
S
–23
2
j/°K)
BANDWIDTH = 1.0 Hz
200
1.0k
BANDWIDTH = 1.0 Hz
1/ 2
2.0 dB
3.0 dB
300
1.0 dB
R
2.0k
S
~ ~
500 700 1.0K
5.0 dB
5.0k
M10–3/6
10 k

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