BCW61CLT1 Leshan Radio Company, BCW61CLT1 Datasheet - Page 6

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BCW61CLT1

Manufacturer Part Number
BCW61CLT1
Description
General Purpose Transistors(PNP Silicon)
Manufacturer
Leshan Radio Company
Datasheet
10
10
10
10
10
10
10
–1
–2
4
3
2
1
0
–4
Figure 15. Typical Collector Leakage Current
V
–2
CC
= 30 V
T
J
0
, JUNCTION TEMPERATURE (°C)
+20
+40
I
CEO
+60
+80
I
CEX
+100
@ V
AND
I
BE(off)
+120
CBO
= 3.0 V
+140
BCW61BLT1 BCW61CLT1 BCW61DLT1
+160
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
model as shown in Figure 15. Using the model and the device
thermal response the normalized effective transient thermal re-
sistance of Figure 14 was calculated for various duty cycles.
the steady state value R
Example:
ing conditions:
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
For more information, see AN–569.
T = r(t) x P
A train of periodical power pulses can be represented by the
The MPS3905 is dissipating 2.0 watts peak under the follow-
To find Z
t
1
= 1.0 ms, t
LESHAN RADIO COMPANY, LTD.
(pk)
JA(t)
x R
, multiply the value obtained from Figure 14 by
2
= 5.0 ms. (D = 0.2)
JA
= 0.22 x 2.0 x 200 = 88°C.
JA
.
M10–6/6

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