MTV25N50E Motorola, MTV25N50E Datasheet

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MTV25N50E

Manufacturer Part Number
MTV25N50E
Description
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
Manufacturer
Motorola
Datasheet

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Part Number
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Part Number:
MTV25N50E/D
Manufacturer:
ON
Quantity:
12 500
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TMOS
Power Field Effect Transistor
D 3 PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount
components with higher power and lower R DS(on) capabilities. This
high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a drain–to–
source diode with a fast recovery time. Designed for high voltage,
high speed switching applications in surface mount PWM motor
controls and both ac–dc and dc–dc power supplies. These devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
The D 3 PAK package has the capability of housing the largest chip
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured – Not Sheared
Specifically Designed Leadframe for Maximum Power Dissipation
Available in 24 mm, 13–inch/500 Unit Tape & Reel, Add –RL Suffix to Part Number
Derate above 25 C
(V DD = 100 Vdc, V GS = 10 Vdc, Peak I L = 25 Apk, L = 3.0 mH, R G = 25
— Continuous @ 100 C
— Single Pulse (t p
E-FET.
— Junction to Ambient
— Junction to Ambient (1)
(T C = 25 C unless otherwise noted)
10 s)
Rating
N–Channel
G
)
D
S
Symbol
T J , T stg
V DGR
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTV25N50E
R DS(on) = 0.200 OHM
D 3 PAK Surface Mount
CASE 433–01, Style 2
TMOS POWER FET
25 AMPERES
– 55 to 150
500 VOLTS
Value
15.8
62.5
500
500
250
938
260
2.0
0.5
Order this document
25
88
35
20
by MTV25N50E/D
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
C
C
1

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MTV25N50E Summary of contents

Page 1

... Thermal Clad is a trademark of the Bergquist Company. Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 D N–Channel G Rating ) Order this document by MTV25N50E/D MTV25N50E TMOS POWER FET 25 AMPERES 500 VOLTS R DS(on) = 0.200 OHM CASE 433–01, Style PAK Surface Mount S ...

Page 2

... MTV25N50E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 500 Vdc Vdc 500 Vdc Vdc 125 C) Gate– ...

Page 3

... Figure 4. On–Resistance versus Drain Current 10000 1000 100 10 100 150 0 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTV25N50E 100 – DRAIN CURRENT (AMPS) ...

Page 4

... MTV25N50E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTV25N50E t d(off d(on) 10 ...

Page 6

... MTV25N50E 100 SINGLE PULSE 100 1.0 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 Figure 14. Diode Reverse Recovery Waveform ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTV25N50E Board Material = 0.0625 G–10/FR– Copper 5.0 Watts ...

Page 8

... MTV25N50E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 17. Typical Solder Heating Profile MTV25N50E STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... BSC H 0.105 0.110 2.67 2.79 J 0.018 0.022 0.46 0.56 K 0.150 0.160 3.81 4.06 L 0.058 0.062 1.47 1.57 N 0.353 0.357 8.97 9.07 P 0.078 0.082 1.98 2.08 Q 0.053 0.057 1.35 1.45 R 0.623 0.627 15.82 15.93 S 0.313 0.317 7.95 8.05 U 0.028 0.032 0.71 0.81 V 0.050 ––– 1.27 ––– W 0.054 0.058 1.37 1.47 X 0.050 0.060 1.27 1.52 Y 0.104 0.108 2.64 2.74 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MTV25N50E/D ...

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