MTV25N50E Motorola, MTV25N50E Datasheet - Page 2

• Manufacturer Part Number: MTV25N50E
• Description: TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
• Manufacturer: Motorola

(1) Pulse Test: Pulse Width 300 s, Duty Cycle
(2) Switching characteristics are independent of operating junction temperature.
MTV25N50E
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = 20 Vdc, V DS = 0 Vdc)
Gate Threshold Voltage
Static Drain–to–Source On–Resistance (V GS = 10 Vdc, I D = 12.5 Adc)
Drain–to–Source On–Voltage
Forward Transconductance (V DS = 15 Vdc, I D = 12.5 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 500 Vdc, V GS = 0 Vdc)
(V DS = 500 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 Adc)
Threshold Temperature Coefficient (Negative)
(V GS = 10 Vdc, I D = 25 Adc)
(V GS = 10 Vdc, I D = 12.5 Adc, T J = 125 C)
(See Figure 8)
(See Figure 8)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
Characteristic
(I S = 25 Adc, V GS = 0 Vdc, T J = 125 C)
(T J = 25 C unless otherwise noted)
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DD = 250 Vdc, I D = 25 Adc,
(V DD = 250 Vdc, I D = 25 Adc,
(V DS = 400 Vdc, I D = 25 Adc,
(V DS = 400 Vdc, I D = 25 Adc,
(V DS = 400 Vdc, I D = 25 Adc,
(I S = 25 Adc, V GS = 0 Vdc)
(I S = 25 Adc, V GS = 0 Vdc,
(I S = 25 Adc, V GS = 0 Vdc,
(I S = 25 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc)
2%.
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
R G = 9.1 )
R G = 9.1 )
G = 9.1 )
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
500
2.0
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4700
0.51
0.19
0.79
9.42
Typ
520
200
137
118
112
132
501
332
170
2.9
7.0
5.4
0.9
5.0
17
37
29
63
61
13
—
—
—
—
—
6580
Max
100
100
728
280
280
240
230
180
4.0
0.2
6.0
5.3
1.1
—
—
10
—
—
70
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
Vdc
nC
nH
nH
Adc
pF
ns
ns
C