MX29F001T Macronix, MX29F001T Datasheet

MX29F001T

Manufacturer Part Number

MX29F001T

Description

1M bit CMOS Flash Memory

Manufacturer

Macronix

Datasheet

1.MX29F001T.pdf (43 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F001TPC-12

Manufacturer:

MARXONIX

Quantity:

222

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F001TPC-12

Manufacturer:

Quantity:

6 222

Company:

H&T Electronics

Part Number:

MX29F001TPC-70

Quantity:

4 200

Company:

H&T Electronics

Part Number:

MX29F001TPC-90

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F001TQC-12

Manufacturer:

MXIC

Quantity:

12 388

Current page: 1 of 43
Download datasheet (588Kb)

P/N: PM0515

FEATURES

• 5.0V ± 10% for read, erase and write operation

• 131072x8 only organization

• Fast access time: 55/70/90/120ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase Suspend/Erase Resume

GENERAL DESCRIPTION

The MX29F001T/B is a 1-mega bit Flash memory

organized as 128K bytes of 8 bits only MXIC's

Flash memories offer the most cost-effective and

reliable read/write non-volatile random access

memory. The MX29F001T/B is packaged in 32-pin

PLCC, TSOP, PDIP. It is designed to be repro-

grammed and erased in-system or in-standard

EPROM programmers.

The standard MX29F001T/B offers access time as

fast as 55ns, allowing operation of high-speed

microprocessors without wait states. To eliminate

bus contention, the MX29F001T/B has separate

chip enable (CE) and output enable (OE) controls.

MXIC's Flash memories augment EPROM function-

ality with in-circuit electrical erasure and

programming. The MX29F001T/B uses a command

- 30mA maximum active current(5MHz)

- 1u

- Byte Programming (7us typical)

- Sector Erase (8K-Byte x 1, 4K-Byte x 2, 8K Byte

x 2, 32K-Byte x 1, and 64K-Byte x 1)

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically programs and verifies data at

specified address

– Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation.

typical standby current

• Status Reply

• Chip protect/unprotect for 5V only system or 5V/12V

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1 to VCC+1V

• Boot Code Sector Architecture

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

• Boot Code Sector Architecture

• 20 years data retention

and fixed power supply levels during erase and

programming, while maintaining maximum EPROM

compatibility.

MXIC Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles.

The MXIC cell is designed to optimize the erase and

programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low

internal electric fields for erase and programming

operations produces reliable cycling.

MX29F001T/B uses a 5.0V ± 10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

1M-BIT [128K x 8] CMOS FLASH MEMORY

- Data polling & Toggle bit for detection of program

and erase cycle completion.

system

- T = Top Boot Sector

- B = Bottom Boot Sector

- 32-pin PLCC

- 32-pin TSOP

- 32-pin PDIP

- T=Top Boot Sector

- B=Bottom Boot Sector

MX29F001T/B

REV. 2.5, NOV. 20, 2002

The

Related parts for MX29F001T

Related keywords

MX29F001T datasheet
MX29F001T data sheet
MX29F001T pdf datasheet
MX29F001T component
MX29F001T part
MX29F001T distributor
MX29F001T RoHS
MX29F001T datasheet download