MX29F200CT Macronix International, MX29F200CT Datasheet

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MX29F200CT

Manufacturer Part Number
MX29F200CT
Description
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
Manufacturer
Macronix International
Datasheet
FEATURES
• 5.0V±10% for read, erase and write operation
• 131072x16/262144x8 switchable
• Fast access time: 55/70/90ns
• Compatible with MX29F200T/B device
• Low power consumption
• Command register architecture
• Auto Erase (chip & sector) and Auto Program
• Status Reply
• Ready/Busy# pin(RY/BY#)
• Compatibility with JEDEC standard
GENERAL DESCRIPTION
The MX29F200C T/B is a 2-mega bit, single 5 Volt Flash
memory organized as 1M word x16 or 2M bytex8 MXIC's
Flash memories offer the most cost-effective and reli-
able read/write non-volatile random access memory.
The MX29F200C T/B is packaged in 44-pin SOP and 48-
pin TSOP. It is designed to be reprogrammed and
erased in-system or in-standard EPROM programmers.
The standard MX29F200C T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention, the
MX29F200C T/B has separate chip enable (CE#) and
output enable (OE# ) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F200C T/B uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM1250
- 40mA maximum active current@5MHz
- 1uA typical standby current
- Byte/Word Programming (9us/11us typical)
- Sector Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1,
and 64K-Byte x3)
- Automatically erase any combination of sectors or
the whole chip with Erase Suspend capability.
- Automatically program and verify data at specified
address
- Data# Polling & Toggle bit for detection of program
and erase cycle completion.
- Provides a hardware method or detecting program
or erase cycle completion
- Pinout and software compatible with single-power
supply Flash
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
1
• Sector protection
• Sector protect/chip unprotect for 5V only system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
• Low VCC write inhibit is equal to or less than 3.2V
• Erase suspend/ Erase Resume
• Hardware reset pin
• 20 years data retention
• Package type:
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields for
erase and programming operations produces reliable
cycling. The MX29F200C T/B uses a 5.0V 10% VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MX29F200C T/B
- Superior inadvertent write protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
- T = Top Boot Sector
- B = Bottom Boot Sector
- Suspends an erase operation to read data from, or
program data to a sector that is not being erased, then
resume the erase operation.
- Resets internal state mechine to the read mode
- 44-pin SOP
- 48-pin TSOP
- All Pb-free devices are RoHS Compliant
www.DataSheet4U.com
REV. 1.0, DEC. 14, 2005

Related parts for MX29F200CT

MX29F200CT Summary of contents

Page 1

FEATURES • 5.0V±10% for read, erase and write operation • 131072x16/262144x8 switchable • Fast access time: 55/70/90ns • Compatible with MX29F200T/B device • Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current • Command register architecture ...

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PIN CONFIGURATIONS 44 SOP(500mil) RESET WE# 43 RY/BY A10 A11 A12 A13 A14 A15 ...

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... SECTOR STRUCTURE MX29F200CT Top Boot Sector Addresses Tables A16 A15 A14 SA0 SA1 SA2 SA3 SA4 SA5 SA6 MX29F200CB Bottom Boot Sector Addresses Tables A16 A15 A14 SA0 SA1 SA2 SA3 ...

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BLOCK DIAGRAM CONTROL CE# INPUT OE# WE# LOGIC ADDRESS LATCH A0-A16 AND BUFFER A-1/Q15 Q0-Q14 P/N:PM1250 MX29F200C T/B PROGRAM/ERASE HIGH VOLTAGE FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV PROGRAM DATA LATCH I/O BUFFER 4 www.DataSheet4U.com ...

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AUTOMATIC PROGRAMMING The MX29F200C T/B is byte programmable using the Automatic Programming algorithm. The Automatic Pro- gramming algorithm does not require the system to time out sequence or verify the data programmed. The typical chip programming time of the MX29F200C ...

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COMMAND DEFINITIONS Device operations are selected by writing specific ad- dress and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table ...

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TABLE 2. MX29F200C T/B BUS OPERATIONS Pins CE# Mode Read Silicon ID L Manufacturer Code(1) Read Silicon ID L Device Code(1) Read L Standby H Output Disable L Write L Sector Protect without 12V L system (6) Chip Unprotect without ...

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... ID command sequence into the command regis- ter. Following the command write, a read cycle with A1=VIL,A0=VIL retrieves the manufacturer code of C2H/ 00C2H. A read cycle with A1=VIL, A0=VIH returns the device code of 51H/2251H for MX29F200CT, 57H/2257H for MX29F200CB. TABLE 3. EXPANDED SILICON ID CODE Pins ...

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SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Set-up Sector Erase command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will ...

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Table 4. Write Operation Status Status Byte Program in Auto Program Algorithm Auto Erase Algorithm In Progress Erase Suspended Mode Byte Program in Auto Program Algorithm Exceeded Time Limits Auto Erase Algorithm Erase Suspend Program Notes and Q2 ...

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ERASE RESUME This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all ...

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After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores ...

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The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the ...

Page 14

SECTOR PROTECTION WITHOUT 12V SYSTEM The MX29F200C T/B also feature a hardware sector protection method in a system without 12V power suppply. The programming equipment do not need to supply 12 volts to protect sectors. The details are shown in ...

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TEMPORARY SECTOR UNPROTECT OPERATION Temporary Sector Unprotect Completed(Note 2) Notes : 1. All protected sectors are temporary unprotected. P/N:PM1250 MX29F200C T/B Start RESET# = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET# = VIH VID=11.5V~12.5V 2. All ...

Page 16

TEMPORARY SECTOR UNPROTECT Parameter Std. Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET# Setup Time for Temporary Sector Unprotect Note: Not 100% tested TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM 12V RESET tVIDR CE# WE# RY/BY# ...

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Parameter Std Description tREADY1 RESET# PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET# PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP1 RESET# Pulse Width (During Automatic Algorithms) tRP2 RESET# Pulse ...

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ABSOLUTE MAXIMUM RATINGS RATING Ambient Operating Temperature Ambient Temperature with Power -55 Applied Storage Temperature Applied Input Voltage Applied Output Voltage VCC to Ground Potential A9 DC/AC Operating Conditions Operating Temperature VCC Power Supply o CAPACITANCE ...

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READ OPERATION DC CHARACTERISTICS Symbol PARAMETER ILI Input Leakage Current ILO Output Leakage Current ISB1 Standby VCC current ISB2 ICC1 Operating VCC current ICC2 VIL Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH1 Output High Voltage(TTL) ...

Page 20

READ TIMING WAVEFORMS VIH A0~16 VIL VIH CE# VIL VIH WE# VIL VIH OE# VIL VOH HIGH Z DATA Q0~7 VOL P/N:PM1250 MX29F200C T/B ADD Valid tCE tOE tDF tACC tOH DATA Valid 20 www.DataSheet4U.com HIGH Z REV. 1.0 , ...

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DC CHARACTERISTICS SYMBOL PARAMETER ICC1 (Read) Operating VCC Current ICC2 ICC3 (Program) ICC4 (Erase) ICCES VCC Erase Suspend Current NOTES: 1. VIL min. = -0.6V for pulse width is equal to or less than 20ns VIH is over ...

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AC CHARACTERISTICS TA=- VCC=5V 10% SYMBOL PARAMETER tOES OE# setup time tCWC Command programming cycle tCEP WE# programming pulse width tCEPH WE# programming pulse width High tAS Address setup time tAH Address hold time tDS Data ...

Page 23

SWITCHING TEST CIRCUITS DEVICE UNDER TEST SWITCHING TEST WAVEFORMS for 29F200C T/B-70 and 29F200C T/B-90 0.7xVCC 0.45V AC TESTING: Inputs are driven at 0.7xVCC for a logic "1" and 0.45V for a logic "0". Input pulse rise and fall times ...

Page 24

COMMAND WRITE TIMING WAVEFORM VCC 5V VIH ADDRESS A0~16 VIL tAS VIH WE# VIL tOES CE# VIH VIL tCS OE# VIH VIL VIH DATA Q0-7 VIL P/N:PM1250 MX29F200C T/B ADD Valid tAH tCEPH tCEP tCWC tCH tDS tDH DIN 24 ...

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AUTOMATIC PROGRAMMING TIMING WAVEFORM One byte data is programmed. Verify in fast algorithm and additional programming by external control are not required because these operations are executed auto- matically by internal control circuit. Programming com- pletion can be verified by ...

Page 26

AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART (WORD MODE) Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Toggle Bit Checking Q6 not Toggled NO Invalid Verify Byte OK Command Auto Program Completed P/N:PM1250 ...

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AUTOMATIC CHIP ERASE TIMING WAVEFORM All data in chip are erased. External erase verification is not required because data is erased automatically by internal control circuit. Erasure completion can be verified by Data# Polling and toggle bit checking after AUTOMATIC ...

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AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART (WORD MODE) Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H NO Invalid Command ...

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AUTOMATIC SECTOR ERASE TIMING WAVEFORM Sector data indicated by A12 to A16 are erased. External erase verification is not required because data are erased automatically by internal control circuit. Erasure completion can be verified by Data# Polling and toggle bit ...

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AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address Toggle Bit Checking Q6 Toggled ...

Page 31

ERASE SUSPEND/ERASE RESUME FLOWCHART Note: If the system implements an endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times, then the 400us time delay must be put into consideration. P/N:PM1250 MX29F200C T/B START Write Data ...

Page 32

TIMING WAVEFORM FOR SECTOR PROTECTION FOR SYSTEM WITHOUT 12V OE# tCEP WE# CE# Data Don't care (Note 2) A16-A12 Note1: Must issue "unlock for sector protect/unprotect" command before sector protection for a system without 12V provided. Note2: ...

Page 33

TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITHOUT 12V OE# tCEP WE# CE# Data Don't care (Note 2) Note1: Must issue "unlock for sector protect/unprotect" command before sector unprotection for a system without 12V provided. Note2: Except ...

Page 34

SECTOR PROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V Increment PLSCNT No PLSCNT=32? Yes Device Failed P/N:PM1250 MX29F200C T/B START PLSCNT=1 Write "unlock for sector protect/unprotect" Command (Table1) Set Up Sector Addr (A16,A15,A14,A13,A12) OE#=VIH, A9=VIH CE#=VIL, A6=VIL Activate WE# Pulse to start ...

Page 35

SECTOR UNPROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V Increment Sector Addr * It is recommended before unprotect the whole chip, all sectors should be protected in advance. P/N:PM1250 MX29F200C T/B START Protect All Sectors PLSCNT=1 Write "unlock for sector protect/unprotect" Command ...

Page 36

ID CODE READ TIMING WAVEFORM VCC 5V VID ADD VIH A9 VIL tACC A1 VIH VIL ADD VIH A2-A8 A10-A17 VIL CE# VIH VIL tCE VIH WE# VIL VIH OE# VIL VIH DATA VIL Q0-Q15 P/N:PM1250 MX29F200C T/B tACC tOE ...

Page 37

RECOMMENDED OPERATING CONDITIONS At Device Power-Up AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate correctly. VCC(min) ...

Page 38

ERASE AND PROGRAMMING PERFORMANCE(1) PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode Word Mode Erase/Program Cycles Note: 1. Not 100% Tested, Excludes external system level over head. 2. Typical values ...

Page 39

... ORDERING INFORMATION PART NO. ACCESS TIME (ns) MX29F200CTMI-55 55 MX29F200CTMI-70 70 MX29F200CTMI-90 90 MX29F200CTTI-55 55 MX29F200CTTI-70 70 MX29F200CTTI-90 90 MX29F200CBMI-55 55 MX29F200CBMI-70 70 MX29F200CBMI-90 90 MX29F200CBTI-55 55 MX29F200CBTI-70 70 MX29F200CBTI-90 90 MX29F200CTMI-55G 55 MX29F200CTMI-70G 70 MX29F200CTMI-90G 90 MX29F200CTTI-55G 55 MX29F200CTTI-70G 70 MX29F200CTTI-90G 90 MX29F200CBMI-55G 55 MX29F200CBMI-70G 70 MX29F200CBMI-90G 90 MX29F200CBTI-55G 55 MX29F200CBTI-70G 70 MX29F200CBTI-90G 90 P/N:PM1250 MX29F200C T/B OPERATING STANDBY Current MAX. (mA) Current MAX. (uA ...

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PART NAME DESCRIPTION P/N:PM1250 MX29F200C T/B 200 OPTION: G: Lead-free package blank: normal SPEED: 55:55ns 70:70ns 90:90ns TEMPERATURE RANGE: I: Industrial (-40˚ 85˚ C) PACKAGE: M:SOP T: TSOP BOOT ...

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PACKAGE INFORMATION P/N:PM1250 MX29F200C T/B 41 www.DataSheet4U.com REV. 1.0 , DEC. 14, 2005 ...

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P/N:PM1250 MX29F200C T/B 42 www.DataSheet4U.com REV. 1.0 , DEC. 14, 2005 ...

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REVISION HISTORY Revision No. Description 1.0 1. Removed "Preliminary" title 2. Removed commercial grade 3. Added access time: 55ns P/N:PM1250 MX29F200C T/B Page P1 All All 43 www.DataSheet4U.com Date DEC/14/2005 REV. 1.0 , DEC. 14, 2005 ...

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... MX29F200C T/B MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. www.DataSheet4U.com ...

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