MX29LV640BT Macronix International, MX29LV640BT Datasheet - Page 63

• Manufacturer Part Number: MX29LV640BT
• Description: 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
• Manufacturer: Macronix International

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ERASE AND PROGRAMMING PERFORMANCE (1)
Note:
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25 C, f=1.0MHz
P/N:PM1076
LATCH-UP CHARACTERISTICS
TSOP PIN CAPACITANCE
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Accelerated Word/Byte Program Time
Chip Programming Time
Erase/Program Cycles
Parameter Symbol
CIN
COUT
CIN2
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
1. Not 100% Tested, Excludes external system level over head.
2. Typical program and erase times assume the following condition= 25 C,3.0V VCC.
Additionally, programming typicals assume checkerboard pattern.
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
Byte Mode
Word Mode
100,000
63
MIN.
MX29LV640BT/BB
VOUT=0
Test Set
VIN=0
VIN=0
TYP.(2)
LIMITS
0.9
45
11
50
45
9
7
TYP
8.5
7.5
6
MAX.
-100mA
300
360
210
160
140
15
65
-1.0V
-1.0V
MIN.
MAX
7.5
12
9
REV. 1.2, SEP. 07, 2005
Cycles
UNITS
Vcc + 1.0V
sec
sec
sec
sec
+100mA
UNIT
us
us
us
13.5V
MAX.
pF
pF
pF