mtd12n06ezl ON Semiconductor, mtd12n06ezl Datasheet

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mtd12n06ezl

Manufacturer Part Number
mtd12n06ezl
Description
Tmos Power Fet 12 Amperes 60 Volts
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mtd12n06ezlT4
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer’s
TMOS
High Energy Power FET
DPAK for Surface Mount or
Insertion Mount
N−Channel Enhancement−Mode Silicon Gate
energy in the avalanche and mode and switch efficiently. This new
high energy device also offers a gate−to−source zener diode
designed for 4 kV ESD protection (human body model).
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E−FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage — Continuous
Gate−Source Voltage
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy — Starting T
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced TMOS power FET is designed to withstand high
ESD Protected
4 kV Human Body Model
400 V Machine Model
Avalanche Energy Capability
Internal Source−To−Drain Diode Designed to Replace External
Zener Transient Suppressor−Absorbs High Energy in the
Avalanche Mode
Derate above 25 C
(V
DD
= 25 Vdc, V
— Continuous @ 100 C
— Single Pulse (t
E−FET.
GS
— Junction to Ambient
— Junction to Ambient (1)
— Non−Repetitive (t
GS
= 5.0 Vdc, I
(T
C
= 1.0 M )
Data Sheet
= 25 C unless otherwise noted)
A
C
= 25 C, when mounted to minimum recommended pad size
= 25 C
p
L
10 s)
= 12 Apk, L = 1.0 mH, R
p
Rating
50 ms)
G
= 25 )
J
= 25 C
G
D
S
Symbol
T
V
V
V
R
R
R
J
V
E
I
DGR
GSM
P
, T
DSS
DM
T
I
I
GS
AS
D
D
D
JC
JA
JA
L
stg
MTD12N06EZL
CASE 369A−13, Style 2
R
TMOS POWER FET
DPAK Surface Mount
DS(on)
−55 to 150
12 AMPERES
Value
60 VOLTS
0.36
1.75
2.78
71.4
100
260
Order this document
7.1
60
60
12
36
45
72
by MTD12N06EZL/D
15
20
= 0.180 OHM
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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mtd12n06ezl Summary of contents

Page 1

... Thermal Clad is a trademark of the Bergquist Company. Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 G Rating 50 ms Order this document by MTD12N06EZL/D MTD12N06EZL TMOS POWER FET 12 AMPERES 60 VOLTS R = 0.180 OHM DS(on) D CASE 369A−13, Style 2 DPAK Surface Mount S ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 12 10 The Forward Biased Safe Operating ...

Page 6

100 SINGLE PULSE LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. ...

Page 7

INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper ...

Page 8

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 10

... D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 −−− 0.51 −−− V 0.030 0.050 0.77 1.27 Z 0.138 −−− 3.51 −−− MTD12N06EZL/D ...

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