mtd12n06ezl ON Semiconductor, mtd12n06ezl Datasheet - Page 2

• Manufacturer Part Number: mtd12n06ezl
• Description: Tmos Power Fet 12 Amperes 60 Volts
• Manufacturer: ON Semiconductor

(1) Pulse Test: Pulse Width
(2) Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Source Breakdown Voltage
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V
Temperature Coefficient (Positive)
(V
(V
(V
(V
(V
(V
Temperature Coefficient (Negative)
(I
(I
(S
(See Figures 8 & 9)
(S
(See Figure 14)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
D
D
GS
DS
DS
DS
GS
GS
DS
= 12 Adc)
= 6.0 Adc, T
Fi
Fi
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= 0 V, I
= 10 Vdc, V
= 10 Vdc, V
= V
GS
, I
G
14)
D
8 & 9)
= 10 mA)
D
= 250 Adc)
J
= 0.25 mAdc)
= 125 C)
GS
GS
DS
DS
= 0 Vdc)
= 0 Vdc, T
= 0 V, T
= 0 V, T
300 s, Duty Cycle
GS
DS
Characteristic
J
J
= 5.0 Vdc)
J
= 8.0 Vdc, I
= 25 C)
= 150 C)
= 125 C)
(I
S
GS
(T
= 12 Adc, V
J
= 5.0 Vdc, I
(V
(V
(V
(V
(V
(I
(I
(I
= 25 C unless otherwise noted)
DS
D
S
S
S
DS
DS
DS
= 6.0 Adc)
= 12 Adc, V
= 12 Adc, V
= 25 Vdc, V
dI
= 30 Vdc, I
= 48 Vdc, I
12 Adc, V
2%.
V
V
V
25 Vd
S
48 Vdc, I
f = 1.0 MHz)
f = 1.0 MHz)
GS
GS
GS
R
R
/dt = 100 A/ s)
GS
G
G
D
= 5.0 Vdc)
= 5 0 Vdc
= 5.0 Vdc,
= 9.1 )
= 6.0 Adc)
= 0 Vdc, T
9.1 )
V
GS
GS
GS
D
D
D
GS
= 12 Adc,
= 12 Adc,
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
12 Adc,
0 Vdc,
0 Vd
J
= 125 C)
Motorola TMOS Power MOSFET Transistor Device Data
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
DS(on)
C
V
GS(th)
g
C
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
L
L
t
t
t
oss
FS
t
t
SD
iss
rss
RR
rr
a
b
r
D
S
f
T
1
2
3
Min
1.0
3.0
60
—
—
—
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.013
0.06
10.6
1.05
Typ
430
224
436
158
186
325
124
201
1.5
4.0
6.8
1.4
5.9
6.0
1.1
4.5
7.5
51
70
—
—
—
—
—
—
—
—
—
Max
0.18
100
500
100
600
310
100
540
380
340
2.0
2.6
2.3
1.4
10
90
40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
nC
nH
nH
Adc
Adc
ns
ns
C